Virtual particle (updated)

From Wikipedia, the free encyclopedia

https://en.wikipedia.org/wiki/Virtual_particle

 

In physics, a virtual particle is a transient quantum fluctuation that exhibits some of the characteristics of an ordinary particle, while having its existence limited by the uncertainty principle. The concept of virtual particles arises in perturbation theory of quantum field theory where interactions between ordinary particles are described in terms of exchanges of virtual particles. A process involving virtual particles can be described by a schematic representation known as a Feynman diagram, in which virtual particles are represented by internal lines.

Virtual particles do not necessarily carry the same mass as the corresponding real particle, although they always conserve energy and momentum. The longer the virtual particle exists, the closer its characteristics come to those of ordinary particles. They are important in the physics of many processes, including particle scattering and Casimir forces. In quantum field theory, even classical forces—such as the electromagnetic repulsion or attraction between two charges—can be thought of as due to the exchange of many virtual photons between the charges. Virtual photons are the exchange particle for the electromagnetic interaction.

The term is somewhat loose and vaguely defined, in that it refers to the view that the world is made up of "real particles": it is not; rather, "real particles" are better understood to be excitations of the underlying quantum fields. Virtual particles are also excitations of the underlying fields, but are "temporary" in the sense that they appear in calculations of interactions, but never as asymptotic states or indices to the scattering matrix. The accuracy and use of virtual particles in calculations is firmly established, but as they cannot be detected in experiments, deciding how to precisely describe them is a topic of debate.

Properties

The concept of virtual particles arises in the perturbation theory of quantum field theory, an approximation scheme in which interactions (in essence, forces) between actual particles are calculated in terms of exchanges of virtual particles. Such calculations are often performed using schematic representations known as Feynman diagrams, in which virtual particles appear as internal lines. By expressing the interaction in terms of the exchange of a virtual particle with four-momentum q, where q is given by the difference between the four-momenta of the particles entering and leaving the interaction vertex, both momentum and energy are conserved at the interaction vertices of the Feynman diagram.

A virtual particle does not precisely obey the energy–momentum relation m²c⁴ = E² − p²c². Its kinetic energy may not have the usual relationship to velocity–indeed, it can be negative. This is expressed by the phrase off mass shell. The probability amplitude for a virtual particle to exist tends to be canceled out by destructive interference over longer distances and times. As a consequence, a real photon is massless and thus has only two polarization states, whereas a virtual one, being effectively massive, has three polarization states.

Quantum tunnelling may be considered a manifestation of virtual particle exchanges. The range of forces carried by virtual particles is limited by the uncertainty principle, which regards energy and time as conjugate variables; thus, virtual particles of larger mass have more limited range.

Written in the usual mathematical notations, in the equations of physics, there is no mark of the distinction between virtual and actual particles. The amplitude that a virtual particle exists interferes with the amplitude for its non-existence, whereas for an actual particle the cases of existence and non-existence cease to be coherent with each other and do not interfere any more. In the quantum field theory view, actual particles are viewed as being detectable excitations of underlying quantum fields. Virtual particles are also viewed as excitations of the underlying fields, but appear only as forces, not as detectable particles. They are "temporary" in the sense that they appear in calculations, but are not detected as single particles. Thus, in mathematical terms, they never appear as indices to the scattering matrix, which is to say, they never appear as the observable inputs and outputs of the physical process being modelled.

There are two principal ways in which the notion of virtual particles appears in modern physics. They appear as intermediate terms in Feynman diagrams; that is, as terms in a perturbative calculation. They also appear as an infinite set of states to be summed or integrated over in the calculation of a semi-non-perturbative effect. In the latter case, it is sometimes said that virtual particles contribute to a mechanism that mediates the effect, or that the effect occurs through the virtual particles. 

Manifestations

There are many observable physical phenomena that arise in interactions involving virtual particles. For bosonic particles that exhibit rest mass when they are free and actual, virtual interactions are characterized by the relatively short range of the force interaction produced by particle exchange. Examples of such short-range interactions are the strong and weak forces, and their associated field bosons. 

For the gravitational and electromagnetic forces, the zero rest-mass of the associated boson particle permits long-range forces to be mediated by virtual particles. However, in the case of photons, power and information transfer by virtual particles is a relatively short-range phenomenon (existing only within a few wavelengths of the field-disturbance, which carries information or transferred power), as for example seen in the characteristically short range of inductive and capacitative effects in the near field zone of coils and antennas.

Some field interactions which may be seen in terms of virtual particles are:

• The Coulomb force (static electric force) between electric charges. It is caused by the exchange of virtual photons. In symmetric 3-dimensional space this exchange results in the inverse square law for electric force. Since the photon has no mass, the coulomb potential has an infinite range.
• The magnetic field between magnetic dipoles. It is caused by the exchange of virtual photons. In symmetric 3-dimensional space, this exchange results in the inverse cube law for magnetic force. Since the photon has no mass, the magnetic potential has an infinite range.
• Electromagnetic induction. This phenomenon transfers energy to and from a magnetic coil via a changing (electro)magnetic field.
• The strong nuclear force between quarks is the result of interaction of virtual gluons. The residual of this force outside of quark triplets (neutron and proton) holds neutrons and protons together in nuclei, and is due to virtual mesons such as the pi meson and rho meson.
• The weak nuclear force—it is the result of exchange by virtual W and Z bosons.
• The spontaneous emission of a photon during the decay of an excited atom or excited nucleus; such a decay is prohibited by ordinary quantum mechanics and requires the quantization of the electromagnetic field for its explanation.
• The Casimir effect, where the ground state of the quantized electromagnetic field causes attraction between a pair of electrically neutral metal plates.
• The van der Waals force, which is partly due to the Casimir effect between two atoms.
• Vacuum polarization, which involves pair production or the decay of the vacuum, which is the spontaneous production of particle-antiparticle pairs (such as electron-positron).
• Lamb shift of positions of atomic levels.
• The Impedance of free space, which defines the ratio between the electric field strength | E | and the magnetic field strength | H |: Z₀ = | E | / | H |.
• Much of the so-called near-field of radio antennas, where the magnetic and electric effects of the changing current in the antenna wire and the charge effects of the wire's capacitive charge may be (and usually are) important contributors to the total EM field close to the source, but both of which effects are dipole effects that decay with increasing distance from the antenna much more quickly than do the influence of "conventional" electromagnetic waves that are "far" from the source. ["Far" in terms of ratio of antenna length or diameter, to wavelength]. These far-field waves, for which E is (in the limit of long distance) equal to cB, are composed of actual photons. Actual and virtual photons are mixed near an antenna, with the virtual photons responsible only for the "extra" magnetic-inductive and transient electric-dipole effects, which cause any imbalance between E and cB. As distance from the antenna grows, the near-field effects (as dipole fields) die out more quickly, and only the "radiative" effects that are due to actual photons remain as important effects. Although virtual effects extend to infinity, they drop off in field strength as 1/r² rather than the field of EM waves composed of actual photons, which drop 1/r (the powers, respectively, decrease as 1/r⁴ and 1/r²). See near and far field for a more detailed discussion. See near field communication for practical communications applications of near fields.

Most of these have analogous effects in solid-state physics; indeed, one can often gain a better intuitive understanding by examining these cases. In semiconductors, the roles of electrons, positrons and photons in field theory are replaced by electrons in the conduction band, holes in the valence band, and phonons or vibrations of the crystal lattice. A virtual particle is in a virtual state where the probability amplitude is not conserved. Examples of macroscopic virtual phonons, photons, and electrons in the case of the tunneling process were presented by Günter Nimtz and Alfons A. Stahlhofen.

Feynman diagrams

One particle exchange scattering diagram

 

The calculation of scattering amplitudes in theoretical particle physics requires the use of some rather large and complicated integrals over a large number of variables. These integrals do, however, have a regular structure, and may be represented as Feynman diagrams. The appeal of the Feynman diagrams is strong, as it allows for a simple visual presentation of what would otherwise be a rather arcane and abstract formula. In particular, part of the appeal is that the outgoing legs of a Feynman diagram can be associated with actual, on-shell particles. Thus, it is natural to associate the other lines in the diagram with particles as well, called the "virtual particles". In mathematical terms, they correspond to the propagators appearing in the diagram.

In the adjacent image, the solid lines correspond to actual particles (of momentum p₁ and so on), while the dotted line corresponds to a virtual particle carrying momentum k. For example, if the solid lines were to correspond to electrons interacting by means of the electromagnetic interaction, the dotted line would correspond to the exchange of a virtual photon. In the case of interacting nucleons, the dotted line would be a virtual pion. In the case of quarks interacting by means of the strong force, the dotted line would be a virtual gluon, and so on.

One-loop diagram with fermion propagator

 

Virtual particles may be mesons or vector bosons, as in the example above; they may also be fermions. However, in order to preserve quantum numbers, most simple diagrams involving fermion exchange are prohibited. The image to the right shows an allowed diagram, a one-loop diagram. The solid lines correspond to a fermion propagator, the wavy lines to bosons. 

Vacuums

In formal terms, a particle is considered to be an eigenstate of the particle number operator a^†a, where a is the particle annihilation operator and a^† the particle creation operator (sometimes collectively called ladder operators). In many cases, the particle number operator does not commute with the Hamiltonian for the system. This implies the number of particles in an area of space is not a well-defined quantity but, like other quantum observables, is represented by a probability distribution. Since these particles do not have a permanent existence, they are called virtual particles or vacuum fluctuations of vacuum energy. In a certain sense, they can be understood to be a manifestation of the time-energy uncertainty principle in a vacuum.

An important example of the "presence" of virtual particles in a vacuum is the Casimir effect. Here, the explanation of the effect requires that the total energy of all of the virtual particles in a vacuum can be added together. Thus, although the virtual particles themselves are not directly observable in the laboratory, they do leave an observable effect: Their zero-point energy results in forces acting on suitably arranged metal plates or dielectrics. On the other hand, the Casimir effect can be interpreted as the relativistic van der Waals force.

Pair production

Virtual particles are often popularly described as coming in pairs, a particle and antiparticle which can be of any kind. These pairs exist for an extremely short time, and then mutually annihilate, or in some cases, the pair may be boosted apart using external energy so that they avoid annihilation and become actual particles, as described below. 

This may occur in one of two ways. In an accelerating frame of reference, the virtual particles may appear to be actual to the accelerating observer; this is known as the Unruh effect. In short, the vacuum of a stationary frame appears, to the accelerated observer, to be a warm gas of actual particles in thermodynamic equilibrium.

Another example is pair production in very strong electric fields, sometimes called vacuum decay. If, for example, a pair of atomic nuclei are merged to very briefly form a nucleus with a charge greater than about 140, (that is, larger than about the inverse of the fine structure constant, which is a dimensionless quantity), the strength of the electric field will be such that it will be energetically favorable to create positron-electron pairs out of the vacuum or Dirac sea, with the electron attracted to the nucleus to annihilate the positive charge. This pair-creation amplitude was first calculated by Julian Schwinger in 1951.

Compared to actual particles

As a consequence of quantum mechanical uncertainty, any object or process that exists for a limited time or in a limited volume cannot have a precisely defined energy or momentum. For this reason, virtual particles – which exist only temporarily as they are exchanged between ordinary particles – do not typically obey the mass-shell relation; the longer a virtual particle exists, the more the energy and momentum approach the mass-shell relation.

The lifetime of real particles is typically vastly longer than the lifetime of the virtual particles. Electromagnetic radiation consist of real photons which may travel light years between the emitter and absorber, but (Coulombic) electrostatic attraction and repulsion is a relatively short-range force that is a consequence of the exchange of virtual photons.

Passive infrared sensor

From Wikipedia, the free encyclopedia

https://en.wikipedia.org/wiki/Passive_infrared_sensor

 

Typical residential/commercial PIR-based motion detector (PID).

 

A passive infrared sensor (PIR sensor) is an electronic sensor that measures infrared (IR) light radiating from objects in its field of view. They are most often used in PIR-based motion detectors. PIR sensors are commonly used in security alarms and automatic lighting applications. PIR sensors detect general movement, but do not give information on who or what moved. For that purpose, an active IR sensor is required. 

PIR sensors are commonly called simply "PIR", or sometimes "PID", for "passive infrared detector". The term passive refers to the fact that PIR devices do not radiate energy for detection purposes. They work entirely by detecting infrared radiation (radiant heat) emitted by or reflected from objects. 

Operating principles

All objects with a temperature above absolute zero emit heat energy in the form of radiation. Usually this radiation isn't visible to the human eye because it radiates at infrared wavelengths, but it can be detected by electronic devices designed for such a purpose. 

Construction

Infrared radiation enters through the front of the sensor, known as the 'sensor face'. At the core of a PIR sensor is a solid state sensor or set of sensors, made from pyroelectric materials—materials which generate energy when exposed to heat. Typically, the sensors are approximately 1/4 inch square (40 mm²), and take the form of a thin film. Materials commonly used in PIR sensors include gallium nitride (GaN), caesium nitrate (CsNO₃), polyvinyl fluorides, derivatives of phenylpyridine, and cobalt phthalocyanine. The sensor is often manufactured as part of an integrated circuit.

PIR-based motion detector

A PIR motion detector used to control an outdoor, automatic light.

 

An indoor light switch equipped with PIR-based occupancy sensor

 

A PIR-based motion detector is used to sense movement of people, animals, or other objects. They are commonly used in burglar alarms and automatically-activated lighting systems. 

Operation

A PIR sensor can detect changes in the amount of infrared radiation impinging upon it, which varies depending on the temperature and surface characteristics of the objects in front of the sensor. When an object, such as a person, passes in front of the background, such as a wall, the temperature at that point in the sensor's field of view will rise from room temperature to body temperature, and then back again. The sensor converts the resulting change in the incoming infrared radiation into a change in the output voltage, and this triggers the detection. Objects of similar temperature but different surface characteristics may also have a different infrared emission pattern, and thus moving them with respect to the background may trigger the detector as well.

PIRs come in many configurations for a wide variety of applications. The most common models have numerous Fresnel lenses or mirror segments, an effective range of about 10 meters (30 feet), and a field of view less than 180°. Models with wider fields of view, including 360°, are available, typically designed to mount on a ceiling. Some larger PIRs are made with single segment mirrors and can sense changes in infrared energy over 30 meters (100 feet) from the PIR. There are also PIRs designed with reversible orientation mirrors which allow either broad coverage (110° wide) or very narrow "curtain" coverage, or with individually selectable segments to "shape" the coverage. 

Differential detection

Pairs of sensor elements may be wired as opposite inputs to a differential amplifier. In such a configuration, the PIR measurements cancel each other so that the average temperature of the field of view is removed from the electrical signal; an increase of IR energy across the entire sensor is self-cancelling and will not trigger the device. This allows the device to resist false indications of change in the event of being exposed to brief flashes of light or field-wide illumination. (Continuous high energy exposure may still be able to saturate the sensor materials and render the sensor unable to register further information.) At the same time, this differential arrangement minimizes common-mode interference, allowing the device to resist triggering due to nearby electric fields. However, a differential pair of sensors cannot measure temperature in this configuration, and therefore is only useful for motion detection. 

Practical Implementation

When a PIR sensor is configured in a differential mode, it specifically becomes applicable as a motion detector device. In this mode when a movement is detected within the "line of sight" of the sensor, a pair of complementary pulses are processed at the output pin of the sensor. In order to implement this output signal for a practical triggering of a load such as a relay or a data logger, or an alarm, the differential signal is rectified using a bridge rectifier and fed to a transistorized relay driver circuit. The contacts of this relay close and open in response to the signals from the PIR, activating the attached load across its contacts, acknowledging the detection of a person within the predetermined restricted area. 

Product design

The PIR sensor is typically mounted on a printed circuit board containing the necessary electronics required to interpret the signals from the sensor itself. The complete assembly is usually contained within a housing, mounted in a location where the sensor can cover the area to be monitored. 

PIR motion sensor design

 

The housing will usually have a plastic "window" through which the infrared energy can enter. Despite often being only translucent to visible light, infrared energy is able to reach the sensor through the window because the plastic used is transparent to infrared radiation. The plastic window reduces the chance of foreign objects (dust, insects, etc.) from obscuring the sensor's field of view, damaging the mechanism, and/or causing false alarms. The window may be used as a filter, to limit the wavelengths to 8-14 micrometres, which is closest to the infrared radiation emitted by humans. It may also serve as a focusing mechanism; see below. 

Focusing

Different mechanisms can be used to focus the distant infrared energy onto the sensor surface. 

Lenses

The plastic window covering may have multiple facets molded into it, to focus the infrared energy onto the sensor. Each individual facet is a Fresnel lens.

• Multi-Fresnel lens type of PIR
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  PIR motion detector housing with cylindrical faceted window. The animation highlights individual facets, each of which is a Fresnel lens, focusing light on the sensor element underneath.
  
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  PIR front cover only (electronics removed), with point light source behind, to show individual lenses.
  
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  PIR with front cover removed, showing location of pyroelectric sensor (green arrow).
  
  

Mirrors

Some PIRs are manufactured with internal, segmented parabolic mirrors to focus the infrared energy. Where mirrors are used, the plastic window cover generally has no Fresnel lenses molded into it.

• Segmented mirror type of PIR
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  Typical residential/commercial PID using an internal segmented mirror for focusing.
  
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  Cover removed. Segmented mirror at bottom with PC (printed circuit) board above it.
  
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  Printed circuit board removed to show segmented mirror.
  
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  Segmented parabolic mirror removed from housing.
  
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  Rear of circuit board which faces mirror when in place. Pyroelectric sensor indicated by green arrow.
  
  

Beam pattern

As a result of the focussing, the detector view is actually a beam pattern. Under certain angles (zones), the PIR sensor receives almost no radiation energy and under other angles the PIR receives concentrated amounts of infrared energy. This separation helps the motion detector to discriminate between field-wide illumination and moving objects.

When a person walks from one angle (beam) to another, the detector will only intermittently see the moving person. This results in a rapidly changing sensor signal which is used by the electronics to trigger an alarm or to turn on lighting. A slowly changing signal will be ignored by the electronics.

The number, shape, distribution and sensitivity of these zones are determined by the lens and/or mirror. Manufacturers do their best to create the optimal sensitivity beam pattern for each application.

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  Motion detector with superimposed beam pattern. The length of the beams is a measure of the detectors sensitivity in that direction.
  
  

Automatic lighting applications

When used as part of a lighting system, the electronics in the PIR typically control an integral relay capable of switching mains voltage. This means the PIR can be set up to turn on lights that are connected to the PIR when movement is detected. This is most commonly used in outdoor scenarios either to deter criminals (security lighting) or for practical uses like the front door light turning on so you can find your keys in the dark. Additional uses can be in public toilets, walk-in pantries, hallways or anywhere that automatic control of lights is useful. This can provide energy savings as the lights are only turned on when they are needed and there is no reliance on users remembering to turn the lights off when they leave the area. 

Security applications

When used as part of a security system, the electronics in the PIR typically control a small relay. This relay completes the circuit across a pair of electrical contacts connected to a detection input zone of the burglar alarm control panel. The system is usually designed such that if no motion is being detected, the relay contact is closed—a 'normally closed' (NC) relay. If motion is detected, the relay will open the circuit, triggering the alarm; or, if a wire is disconnected, the alarm will also operate.

Placement

Manufacturers recommend careful placement of their products to prevent false alarms (i.e., any detection not caused by an intruder).

They suggest mounting the PIRs in such a way that the PIR cannot "see" out of a window. Although the wavelength of infrared radiation to which the chips are sensitive does not penetrate glass very well, a strong infrared source (such as from a vehicle headlight or sunlight) can overload the sensor and cause a false alarm. A person moving on the other side of the glass would not be "seen" by the PID. That may be good for a window facing a public sidewalk, or bad for a window in an interior partition.

It is also recommended that the PIR not be placed in such a position that an HVAC vent would blow hot or cold air onto the surface of the plastic which covers the housing's window. Although air has very low emissivity (emits very small amounts of infrared energy), the air blowing on the plastic window cover could change the plastic's temperature enough to trigger a false alarm.

Sensors are also often designed to "ignore" domestic pets, such as dogs or cats, by setting a higher sensitivity threshold, or by ensuring that the floor of the room remains out of focus.

Since PIR sensors have ranges of up to 10 meters (30 feet), a single detector placed near the entrance is typically all that is necessary for rooms with only a single entrance. PIR-based security systems are also viable in outdoor security and motion-sensitive lighting; one advantage is their low power draw, which allows them to be solar-powered.

PIR remote-based thermometer

Designs have been implemented in which a PIR circuit measures the temperature of a remote object. In such a circuit, a non-differential PIR output is used. The output signal is evaluated according to a calibration for the IR spectrum of a specific type of matter to be observed. By this means, relatively accurate and precise temperature measurements may be obtained remotely. Without calibration to the type of material being observed, a PIR thermometer device is able to measure changes in IR emission which correspond directly to temperature changes, but the actual temperature values cannot be calculated.

Smart lighting

From Wikipedia, the free encyclopedia

https://en.wikipedia.org/wiki/Smart_lighting

Smart lighting is a lighting technology designed for energy efficiency. This may include high efficiency fixtures and automated controls that make adjustments based on conditions such as occupancy or daylight availability. Lighting is the deliberate application of light to achieve some aesthetic or practical effect. It includes task lighting, accent lighting, and general lighting.

Energy consumption

19% of energy use in the world is used for lighting, and 6% of greenhouse emissions in the world derive from this energy used for lighting. In the United States, 65 percent of energy consumption is used by commercial and industrial sectors, and 22 percent of this is used for lighting. 

Minimizing energy usage

Smart lighting is the good way which enables to minimize and save light by allowing the householder to control remotely cooling and heating, lighting, and the control of appliances. This ability saves energy and provides a level of comfort and convenience. From outside the traditional lighting industry, the future success of lighting will require involvement of a number of stakeholders and stakeholder communities. The concept of smart lighting also involves utilizing natural light from the sun to reduce the use of man-made lighting, and the simple concept of people turning off lighting when they leave a room.

Major techniques

Smart lighting control

The use of automatic light dimming is an aspect of smart lighting that serves to reduce energy consumption. Manual light dimming also has the same effect of reducing energy use. 

Use of sensors

In the paper "Energy savings due to occupancy sensors and personal controls: a pilot field study", Galasiu, A.D. and Newsham, G.R have confirmed that automatic lighting systems including occupancy sensors and individual (personal) controls are suitable for open-plan office environments and can save a significant amount of energy (about 32%) when compared to a conventional lighting system, even when the installed lighting power density of the automatic lighting system is ~50% higher than that of the conventional system.

Components

A complete sensor consists of a motion detector, an electronic control unit, and a controllable switch/relay. The detector senses motion and determines whether there are occupants in the space. It also has a timer that signals the electronic control unit after a set period of inactivity. The control unit uses this signal to activate the switch/relay to turn equipment on or off. For lighting applications, there are three main sensor types: passive infrared, ultrasonic, and hybrid. 

Daylight sensing

In response to daylighting technology, daylight-linked automated response systems have been developed to further reduce energy consumption. These technologies are helpful, but they do have their downfalls. Many times, rapid and frequent switching of the lights on and off can occur, particularly during unstable weather conditions or when daylight levels are changing around the switching illuminance. Not only does this disturb occupants, it can also reduce lamp life. A variation of this technology is the 'differential switching' or 'dead-band' photoelectric control which has multiple illuminances it switches from to reduce occupants being disturbed.

Occupancy sensing

Smart lighting that utilizes occupancy sensors can work in unison with other lighting connected to the same network to adjust lighting per various conditions. The table below shows potential electricity savings from using occupancy sensors to control lighting in various types of spaces.

Ultrasonic

The advantages of ultrasonic devices are that they are sensitive to all types of motion and generally there are zero coverage gaps, since they can detect movements not within the line of sight.

Others

Motion-detecting (microwave), heating-sensing (infrared), and sound-sensing; optical cameras, infrared motion, optical trip wires, door contact sensors, thermal cameras, micro radars,daylight sensors.

Smart-lighting emergency ballast for fluorescent lamps

The function of a traditional emergency lighting system is the supply of a minimum illuminating level when a line voltage failure appears. Therefore, they have to store energy in a battery module to supply the lamps in that case of failure. In this kind of lighting systems the internal damages for example battery overcharging, damaged lamps and starting circuit failure must be detected and repaired by specialist workers. 

For this reason, the smart lighting prototype can check its functional state every fourteen days and dump the result into a LED display. With these features they can test themselves checking their functional state and displaying their internal damages. Also the maintenance cost can be decreased. 

Overview

The main idea is the substitution of the simple line voltage sensing block that appears in the traditional systems by a more complex one based on a microcontroller. This new circuit will assume the functions of line voltage sensing and inverter activation, by one side, and the supervision of all the system: lamp and battery state, battery charging, external communications, correct operation of the power stage, etc., by the other side. 

The system has a great flexibility, for instance, it would be possible the communication of several devices with a master computer, which would know the state of each device all the time. 

A new emergency lighting system based on an intelligent module has been developed. The micro-controller as a control and supervision device guarantees increase in the installation security and a maintenance cost saving. 

Another important advantage is the cost saving for mass production specially whether a microcontroller with the program in ROM memory is used. 

Smart lighting ecosystem

Smart lighting systems can be controlled using the internet to adjust lighting brightness and schedules. One approach involves creating a smart lighting network that assigns IP addresses to light bulbs, though users also have the option of integrating smart light bulbs into Zigbee or Bluetooth Low Energy mesh networks.

Information transmitting with smart light

Schubert predicts that revolutionary lighting systems will provide an entirely new means of sensing and broadcasting information. By blinking far too rapidly for any human to notice, the light will pick up data from sensors and carry it from room to room, reporting such information as the location of every person within a high-security building. A major focus of the Future Chips Constellation is smart lighting, a revolutionary new field in photonics based on efficient light sources that are fully tunable in terms of such factors as spectral content, emission pattern, polarization, color temperature, and intensity. Schubert, who leads the group, says smart lighting will not only offer better, more efficient illumination; it will provide “totally new functionalities.” 

Advances in photonics

The advances achieved in photonics are already transforming society just as electronics revolutionized the world in recent decades and it will continue to contribute more in the future. From the statistics, North America’s optoelectronics market grew to more than $20 billion in 2003. The LED (light-emitting diode) market is expected to reach $5 billion in 2007, and the solid-state lighting market is predicted to be $50 billion in 15–20 years, as stated by E. Fred Schubert, Wellfleet Senior Distinguished Professor of the Future Chips Constellation at Rensselaer.

Inventors

• Alexander Nikolayevich Lodygin – carbon-rod filament incandescent lamp (1874)
• Joseph Swan – carbonized-thread filament incandescent lamp (1878)
• Thomas Edison – long-lasting incandescent lamp with high-resistance filament (1880)
• John Richardson Wigham – electric lighthouse illumination (1885)
• Nick Holonyak – light-emitting diode (1962)
• Howard Borden, Gerald Pighini, Mohamed Atalla, Monsanto – LED lamp (1968)
• Shuji Nakamura, Isamu Akasaki, Hiroshi Amano – blue LED (1992)

Semiconductor

From Wikipedia, the free encyclopedia

https://en.wikipedia.org/wiki/Semiconductor

 

A semiconductor material has an electrical conductivity value falling between that of a conductor, such as metallic copper, and an insulator, such as glass. Its resistance falls as its temperature rises; metals are the opposite. Its conducting properties may be altered in useful ways by introducing impurities ("doping") into the crystal structure. Where two differently-doped regions exist in the same crystal, a semiconductor junction is created. The behavior of charge carriers which include electrons, ions and electron holes at these junctions is the basis of diodes, transistors and all modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second most common semiconductor and is used in laser diodes, solar cells, microwave-frequency integrated circuits and others. Silicon is a critical element for fabricating most electronic circuits.

Semiconductor devices can display a range of useful properties such as passing current more easily in one direction than the other, showing variable resistance, and sensitivity to light or heat. Because the electrical properties of a semiconductor material can be modified by doping, or by the application of electrical fields or light, devices made from semiconductors can be used for amplification, switching, and energy conversion.

The conductivity of silicon is increased by adding a small amount (of the order of 1 in 10⁸) of pentavalent (antimony, phosphorus, or arsenic) or trivalent (boron, gallium, indium) atoms. This process is known as doping and resulting semiconductors are known as doped or extrinsic semiconductors. Apart from doping, the conductivity of a semiconductor can equally be improved by increasing its temperature. This is contrary to the behaviour of a metal in which conductivity decreases with increase in temperature.

The modern understanding of the properties of a semiconductor relies on quantum physics to explain the movement of charge carriers in a crystal lattice. Doping greatly increases the number of charge carriers within the crystal. When a doped semiconductor contains mostly free holes it is called "p-type", and when it contains mostly free electrons it is known as "n-type". The semiconductor materials used in electronic devices are doped under precise conditions to control the concentration and regions of p- and n-type dopants. A single semiconductor crystal can have many p- and n-type regions; the p–n junctions between these regions are responsible for the useful electronic behavior.

Some of the properties of semiconductor materials were observed throughout the mid 19th and first decades of the 20th century. The first practical application of semiconductors in electronics was the 1904 development of the cat's-whisker detector, a primitive semiconductor diode used in early radio receivers. Developments in quantum physics in turn led to the development of the transistor in 1947, the integrated circuit in 1958, and the MOSFET (metal–oxide–semiconductor field-effect transistor) in 1959.

Properties

Variable electrical conductivity

Semiconductors in their natural state are poor conductors because a current requires the flow of electrons, and semiconductors have their valence bands filled, preventing the entire flow of new electrons. There are several developed techniques that allow semiconducting materials to behave like conducting materials, such as doping or gating. These modifications have two outcomes: n-type and p-type. These refer to the excess or shortage of electrons, respectively. An unbalanced number of electrons would cause a current to flow through the material.

Heterojunctions

Heterojunctions occur when two differently doped semiconducting materials are joined together. For example, a configuration could consist of p-doped and n-doped germanium. This results in an exchange of electrons and holes between the differently doped semiconducting materials. The n-doped germanium would have an excess of electrons, and the p-doped germanium would have an excess of holes. The transfer occurs until equilibrium is reached by a process called recombination, which causes the migrating electrons from the n-type to come in contact with the migrating holes from the p-type. A product of this process is charged ions, which result in an electric field.

Excited electrons

A difference in electric potential on a semiconducting material would cause it to leave thermal equilibrium and create a non-equilibrium situation. This introduces electrons and holes to the system, which interact via a process called ambipolar diffusion. Whenever thermal equilibrium is disturbed in a semiconducting material, the number of holes and electrons changes. Such disruptions can occur as a result of a temperature difference or photons, which can enter the system and create electrons and holes. The process that creates and annihilates electrons and holes are called generation and recombination.

Light emission

In certain semiconductors, excited electrons can relax by emitting light instead of producing heat. These semiconductors are used in the construction of light-emitting diodes and fluorescent quantum dots.

High thermal conductivity

Semiconductors with high thermal conductivity can be used for heat dissipation and improving thermal management of electronics.

Thermal energy conversion

Semiconductors have large thermoelectric power factors making them useful in thermoelectric generators, as well as high thermoelectric figures of merit making them useful in thermoelectric coolers.

Materials

Silicon crystals are the most common semiconducting materials used in microelectronics and photovoltaics.

A large number of elements and compounds have semiconducting properties, including:

• Certain pure elements are found in Group 14 of the periodic table; the most commercially important of these elements are silicon and germanium. Silicon and germanium are used here effectively because they have 4 valence electrons in their outermost shell which gives them the ability to gain or lose electrons equally at the same time.
• Binary compounds, particularly between elements in Groups 13 and 15, such as gallium arsenide, Groups 12 and 16, groups 14 and 16, and between different group 14 elements, e.g. silicon carbide.
• Certain ternary compounds, oxides and alloys.
• Organic semiconductors, made of organic compounds.

Most common semiconducting materials are crystalline solids, but amorphous and liquid semiconductors are also known. These include hydrogenated amorphous silicon and mixtures of arsenic, selenium and tellurium in a variety of proportions. These compounds share with better known semiconductors the properties of intermediate conductivity and a rapid variation of conductivity with temperature, as well as occasional negative resistance. Such disordered materials lack the rigid crystalline structure of conventional semiconductors such as silicon. They are generally used in thin film structures, which do not require material of higher electronic quality, being relatively insensitive to impurities and radiation damage.

Preparation of semiconductor materials

Almost all of today's electronic technology involves the use of semiconductors, with the most important aspect being the integrated circuit (IC), which are found in laptops, scanners, cell-phones, etc. Semiconductors for ICs are mass-produced. To create an ideal semiconducting material, chemical purity is paramount. Any small imperfection can have a drastic effect on how the semiconducting material behaves due to the scale at which the materials are used.

A high degree of crystalline perfection is also required, since faults in crystal structure (such as dislocations, twins, and stacking faults) interfere with the semiconducting properties of the material. Crystalline faults are a major cause of defective semiconductor devices. The larger the crystal, the more difficult it is to achieve the necessary perfection. Current mass production processes use crystal ingots between 100 and 300 mm (3.9 and 11.8 in) in diameter which are grown as cylinders and sliced into wafers.

There is a combination of processes that is used to prepare semiconducting materials for ICs. One process is called thermal oxidation, which forms silicon dioxide on the surface of the silicon. This is used as a gate insulator and field oxide. Other processes are called photomasks and photolithography. This process is what creates the patterns on the circuity in the integrated circuit. Ultraviolet light is used along with a photoresist layer to create a chemical change that generates the patterns for the circuit.

Etching is the next process that is required. The part of the silicon that was not covered by the photoresist layer from the previous step can now be etched. The main process typically used today is called plasma etching. Plasma etching usually involves an etch gas pumped in a low-pressure chamber to create plasma. A common etch gas is chlorofluorocarbon, or more commonly known Freon. A high radio-frequency voltage between the cathode and anode is what creates the plasma in the chamber. The silicon wafer is located on the cathode, which causes it to be hit by the positively charged ions that are released from the plasma. The end result is silicon that is etched anisotropically.

The last process is called diffusion. This is the process that gives the semiconducting material its desired semiconducting properties. It is also known as doping. The process introduces an impure atom to the system, which creates the p-n junction. In order to get the impure atoms embedded in the silicon wafer, the wafer is first put in a 1,100 degree Celsius chamber. The atoms are injected in and eventually diffuse with the silicon. After the process is completed and the silicon has reached room temperature, the doping process is done and the semiconducting material is ready to be used in an integrated circuit.

Physics of semiconductors

Energy bands and electrical conduction

Filling of the electronic states in various types of materials at equilibrium. Here, height is energy while width is the density of available states for a certain energy in the material listed. The shade follows the Fermi–Dirac distribution (black = all states filled, white = no state filled). In metals and semimetals the Fermi level E_F lies inside at least one band. In insulators and semiconductors the Fermi level is inside a band gap; however, in semiconductors the bands are near enough to the Fermi level to be thermally populated with electrons or holes

 

Semiconductors are defined by their unique electric conductive behavior, somewhere between that of a conductor and an insulator. The differences between these materials can be understood in terms of the quantum states for electrons, each of which may contain zero or one electron (by the Pauli exclusion principle). These states are associated with the electronic band structure of the material. Electrical conductivity arises due to the presence of electrons in states that are delocalized (extending through the material), however in order to transport electrons a state must be partially filled, containing an electron only part of the time. If the state is always occupied with an electron, then it is inert, blocking the passage of other electrons via that state. The energies of these quantum states are critical, since a state is partially filled only if its energy is near the Fermi level.

High conductivity in a material comes from it having many partially filled states and much state delocalization. Metals are good electrical conductors and have many partially filled states with energies near their Fermi level. Insulators, by contrast, have few partially filled states, their Fermi levels sit within band gaps with few energy states to occupy. Importantly, an insulator can be made to conduct by increasing its temperature: heating provides energy to promote some electrons across the band gap, inducing partially filled states in both the band of states beneath the band gap (valence band) and the band of states above the band gap (conduction band). An (intrinsic) semiconductor has a band gap that is smaller than that of an insulator and at room temperature significant numbers of electrons can be excited to cross the band gap.

A pure semiconductor, however, is not very useful, as it is neither a very good insulator nor a very good conductor. However, one important feature of semiconductors (and some insulators, known as semi-insulators) is that their conductivity can be increased and controlled by doping with impurities and gating with electric fields. Doping and gating move either the conduction or valence band much closer to the Fermi level, and greatly increase the number of partially filled states.

Some wider-band gap semiconductor materials are sometimes referred to as semi-insulators. When undoped, these have electrical conductivity nearer to that of electrical insulators, however they can be doped (making them as useful as semiconductors). Semi-insulators find niche applications in micro-electronics, such as substrates for HEMT. An example of a common semi-insulator is gallium arsenide. Some materials, such as titanium dioxide, can even be used as insulating materials for some applications, while being treated as wide-gap semiconductors for other applications.

Charge carriers (electrons and holes)

The partial filling of the states at the bottom of the conduction band can be understood as adding electrons to that band. The electrons do not stay indefinitely (due to the natural thermal recombination) but they can move around for some time. The actual concentration of electrons is typically very dilute, and so (unlike in metals) it is possible to think of the electrons in the conduction band of a semiconductor as a sort of classical ideal gas, where the electrons fly around freely without being subject to the Pauli exclusion principle. In most semiconductors the conduction bands have a parabolic dispersion relation, and so these electrons respond to forces (electric field, magnetic field, etc.) much like they would in a vacuum, though with a different effective mass. Because the electrons behave like an ideal gas, one may also think about conduction in very simplistic terms such as the Drude model, and introduce concepts such as electron mobility.

For partial filling at the top of the valence band, it is helpful to introduce the concept of an electron hole. Although the electrons in the valence band are always moving around, a completely full valence band is inert, not conducting any current. If an electron is taken out of the valence band, then the trajectory that the electron would normally have taken is now missing its charge. For the purposes of electric current, this combination of the full valence band, minus the electron, can be converted into a picture of a completely empty band containing a positively charged particle that moves in the same way as the electron. Combined with the negative effective mass of the electrons at the top of the valence band, we arrive at a picture of a positively charged particle that responds to electric and magnetic fields just as a normal positively charged particle would do in vacuum, again with some positive effective mass. This particle is called a hole, and the collection of holes in the valence band can again be understood in simple classical terms (as with the electrons in the conduction band). 

Carrier generation and recombination

When ionizing radiation strikes a semiconductor, it may excite an electron out of its energy level and consequently leave a hole. This process is known as electron–hole pair generation. Electron-hole pairs are constantly generated from thermal energy as well, in the absence of any external energy source.

Electron-hole pairs are also apt to recombine. Conservation of energy demands that these recombination events, in which an electron loses an amount of energy larger than the band gap, be accompanied by the emission of thermal energy (in the form of phonons) or radiation (in the form of photons).

In some states, the generation and recombination of electron–hole pairs are in equipoise. The number of electron-hole pairs in the steady state at a given temperature is determined by quantum statistical mechanics. The precise quantum mechanical mechanisms of generation and recombination are governed by conservation of energy and conservation of momentum.

As the probability that electrons and holes meet together is proportional to the product of their numbers, the product is in steady state nearly constant at a given temperature, providing that there is no significant electric field (which might "flush" carriers of both types, or move them from neighbour regions containing more of them to meet together) or externally driven pair generation. The product is a function of the temperature, as the probability of getting enough thermal energy to produce a pair increases with temperature, being approximately exp(−E_G/kT), where k is Boltzmann's constant, T is absolute temperature and E_G is band gap.

The probability of meeting is increased by carrier traps—impurities or dislocations which can trap an electron or hole and hold it until a pair is completed. Such carrier traps are sometimes purposely added to reduce the time needed to reach the steady state.

Doping

The conductivity of semiconductors may easily be modified by introducing impurities into their crystal lattice. The process of adding controlled impurities to a semiconductor is known as doping. The amount of impurity, or dopant, added to an intrinsic (pure) semiconductor varies its level of conductivity. Doped semiconductors are referred to as extrinsic. By adding impurity to the pure semiconductors, the electrical conductivity may be varied by factors of thousands or millions.

A 1 cm³ specimen of a metal or semiconductor has of the order of 10²² atoms. In a metal, every atom donates at least one free electron for conduction, thus 1 cm³ of metal contains on the order of 10²² free electrons, whereas a 1 cm³ sample of pure germanium at 20 °C contains about 4.2×10²² atoms, but only 2.5×10¹³ free electrons and 2.5×10¹³ holes. The addition of 0.001% of arsenic (an impurity) donates an extra 10¹⁷ free electrons in the same volume and the electrical conductivity is increased by a factor of 10,000.

The materials chosen as suitable dopants depend on the atomic properties of both the dopant and the material to be doped. In general, dopants that produce the desired controlled changes are classified as either electron acceptors or donors. Semiconductors doped with donor impurities are called n-type, while those doped with acceptor impurities are known as p-type. The n and p type designations indicate which charge carrier acts as the material's majority carrier. The opposite carrier is called the minority carrier, which exists due to thermal excitation at a much lower concentration compared to the majority carrier.

For example, the pure semiconductor silicon has four valence electrons which bond each silicon atom to its neighbors. In silicon, the most common dopants are group III and group V elements. Group III elements all contain three valence electrons, causing them to function as acceptors when used to dope silicon. When an acceptor atom replaces a silicon atom in the crystal, a vacant state (an electron "hole") is created, which can move around the lattice and functions as a charge carrier. Group V elements have five valence electrons, which allows them to act as a donor; substitution of these atoms for silicon creates an extra free electron. Therefore, a silicon crystal doped with boron creates a p-type semiconductor whereas one doped with phosphorus results in an n-type material.

During manufacture, dopants can be diffused into the semiconductor body by contact with gaseous compounds of the desired element, or ion implantation can be used to accurately position the doped regions.

Amorphous semiconductors

Some materials, when rapidly cooled to a glassy amorphous state, have semiconducting properties. These include B, Si, Ge, Se, Te and there are multiple theories to explain them.

Early history of semiconductors

The history of the understanding of semiconductors begins with experiments on the electrical properties of materials. The properties of negative temperature coefficient of resistance, rectification, and light-sensitivity were observed starting in the early 19th century.

Karl Ferdinand Braun developed the crystal detector, the first semiconductor device, in 1874

 

Thomas Johann Seebeck was the first to notice an effect due to semiconductors, in 1821.^[15] In 1833, Michael Faraday reported that the resistance of specimens of silver sulfide decreases when they are heated. This is contrary to the behavior of metallic substances such as copper. In 1839, Alexandre Edmond Becquerel reported observation of a voltage between a solid and a liquid electrolyte when struck by light, the photovoltaic effect. In 1873 Willoughby Smith observed that selenium resistors exhibit decreasing resistance when light falls on them. In 1874, Karl Ferdinand Braun observed conduction and rectification in metallic sulfides, although this effect had been discovered much earlier by Peter Munck af Rosenschold writing for the Annalen der Physik und Chemie in 1835, and Arthur Schuster found that a copper oxide layer on wires has rectification properties that ceases when the wires are cleaned. William Grylls Adams and Richard Evans Day observed the photovoltaic effect in selenium in 1876.

A unified explanation of these phenomena required a theory of solid-state physics which developed greatly in the first half of the 20th Century. In 1878 Edwin Herbert Hall demonstrated the deflection of flowing charge carriers by an applied magnetic field, the Hall effect. The discovery of the electron by J.J. Thomson in 1897 prompted theories of electron-based conduction in solids. Karl Baedeker, by observing a Hall effect with the reverse sign to that in metals, theorized that copper iodide had positive charge carriers. Johan Koenigsberger classified solid materials as metals, insulators and "variable conductors" in 1914 although his student Josef Weiss already introduced the term Halbleiter (semiconductor in modern meaning) in PhD thesis in 1910. Felix Bloch published a theory of the movement of electrons through atomic lattices in 1928. In 1930, B. Gudden stated that conductivity in semiconductors was due to minor concentrations of impurities. By 1931, the band theory of conduction had been established by Alan Herries Wilson and the concept of band gaps had been developed. Walter H. Schottky and Nevill Francis Mott developed models of the potential barrier and of the characteristics of a metal–semiconductor junction. By 1938, Boris Davydov had developed a theory of the copper-oxide rectifier, identifying the effect of the p–n junction and the importance of minority carriers and surface states.

Agreement between theoretical predictions (based on developing quantum mechanics) and experimental results was sometimes poor. This was later explained by John Bardeen as due to the extreme "structure sensitive" behavior of semiconductors, whose properties change dramatically based on tiny amounts of impurities. Commercially pure materials of the 1920s containing varying proportions of trace contaminants produced differing experimental results. This spurred the development of improved material refining techniques, culminating in modern semiconductor refineries producing materials with parts-per-trillion purity.

Devices using semiconductors were at first constructed based on empirical knowledge, before semiconductor theory provided a guide to construction of more capable and reliable devices.

Alexander Graham Bell used the light-sensitive property of selenium to transmit sound over a beam of light in 1880. A working solar cell, of low efficiency, was constructed by Charles Fritts in 1883 using a metal plate coated with selenium and a thin layer of gold; the device became commercially useful in photographic light meters in the 1930s. Point-contact microwave detector rectifiers made of lead sulfide were used by Jagadish Chandra Bose in 1904; the cat's-whisker detector using natural galena or other materials became a common device in the development of radio. However, it was somewhat unpredictable in operation and required manual adjustment for best performance. In 1906 H.J. Round observed light emission when electric current passed through silicon carbide crystals, the principle behind the light-emitting diode. Oleg Losev observed similar light emission in 1922 but at the time the effect had no practical use. Power rectifiers, using copper oxide and selenium, were developed in the 1920s and became commercially important as an alternative to vacuum tube rectifiers.

The first semiconductor devices used galena, including German physicist Ferdinand Braun's crystal detector in 1874 and Bengali physicist Jagadish Chandra Bose's radio crystal detector in 1901.

In the years preceding World War II, infrared detection and communications devices prompted research into lead-sulfide and lead-selenide materials. These devices were used for detecting ships and aircraft, for infrared rangefinders, and for voice communication systems. The point-contact crystal detector became vital for microwave radio systems, since available vacuum tube devices could not serve as detectors above about 4000 MHz; advanced radar systems relied on the fast response of crystal detectors. Considerable research and development of silicon materials occurred during the war to develop detectors of consistent quality.

Early transistors

John Bardeen, William Shockley and Walter Brattain developed the bipolar point-contact transistor in 1947

 

Detector and power rectifiers could not amplify a signal. Many efforts were made to develop a solid-state amplifier and were successful in developing a device called the point contact transistor which could amplify 20db or more. In 1922 Oleg Losev developed two-terminal, negative resistance amplifiers for radio, and he perished in the Siege of Leningrad after successful completion. In 1926 Julius Edgar Lilienfeld patented a device resembling a field-effect transistor, but it was not practical. R. Hilsch and R. W. Pohl in 1938 demonstrated a solid-state amplifier using a structure resembling the control grid of a vacuum tube; although the device displayed power gain, it had a cut-off frequency of one cycle per second, too low for any practical applications, but an effective application of the available theory. At Bell Labs, William Shockley and A. Holden started investigating solid-state amplifiers in 1938. The first p–n junction in silicon was observed by Russell Ohl about 1941, when a specimen was found to be light-sensitive, with a sharp boundary between p-type impurity at one end and n-type at the other. A slice cut from the specimen at the p–n boundary developed a voltage when exposed to light.

The first working transistor was a point-contact transistor invented by John Bardeen, Walter Houser Brattain and William Shockley at Bell Labs in 1947. Shockley had earlier theorized a field-effect amplifier made from germanium and silicon, but he failed to build such a working device, before eventually using germanium to invent the point-contact transistor. In France, during the war, Herbert Mataré had observed amplification between adjacent point contacts on a germanium base. After the war, Mataré's group announced their "Transistron" amplifier only shortly after Bell Labs announced the "transistor".

In 1954, physical chemist Morris Tanenbaum fabricated the first silicon junction transistor at Bell Labs. However, early junction transistors were relatively bulky devices that were difficult to manufacture on a mass-production basis, which limited them to a number of specialised applications.

Silicon semiconductors

Mohamed Atalla developed the surface passivation process in 1957 and the MOS transistor in 1959

 

The first silicon semiconductor device was a silicon radio crystal detector, developed by American engineer Greenleaf Whittier Pickard in 1906. In 1940, Russell Ohl discovered the p-n junction and photovoltaic effects in silicon. In 1941, techniques for producing high-purity germanium and silicon crystals were developed for radar microwave detectors during World War II. In 1955, Carl Frosch and Lincoln Derick at Bell Labs accidentally discovered that silicon dioxide (SiO₂) could be grown on silicon, and they later proposed this could mask silicon surfaces during diffusion processes in 1958.

In the early years of the semiconductor industry, up until the late 1950s, germanium was the dominant semiconductor material for transistors and other semiconductor devices, rather than silicon. Germanium was initially considered the more effective semiconductor material, as it was able to demonstrate better performance due to higher carrier mobility. The relative lack of performance in early silicon semiconductors was due to electrical conductivity being limited by unstable quantum surface states, where electrons are trapped at the surface, due to dangling bonds that occur because unsaturated bonds are present at the surface. This prevented electricity from reliably penetrating the surface to reach the semiconducting silicon layer.

A breakthrough in silicon semiconductor technology came with the work of Egyptian engineer Mohamed Atalla, who developed the process of surface passivation by thermal oxidation at Bell Labs in the late 1950s. He discovered that the formation of a thermally grown silicon dioxide layer greatly reduced the concentration of electronic states at the silicon surface, and that silicon oxide layers could be used to electrically stabilize silicon surfaces. Atalla first published his findings in Bell memos during 1957, and then demonstrated it in 1958. This was the first demonstration to show that high-quality silicon dioxide insulator films could be grown thermally on the silicon surface to protect the underlying silicon p-n junction diodes and transistors. Atalla's surface passivation process enabled silicon to surpass the conductivity and performance of germanium, and led to silicon replacing germanium as the dominant semiconductor material. Atalla's surface passivation process is considered the most important advance in silicon semiconductor technology, paving the way for the mass-production of silicon semiconductor devices. By the mid-1960s, Atalla's process for oxidized silicon surfaces was used to fabricate virtually all integrated circuits and silicon devices. Surface passivation by thermal oxidation remains a key feature of silicon semiconductor technology.

MOSFET (MOS transistor)

The MOSFET (MOS transistor) was invented by Mohamed Atalla and Dawon Kahng in 1959

 

In the late 1950s, Mohamed Atalla utilized his surface passivation and thermal oxidation methods to develop the metal–oxide–semiconductor (MOS) process, which he proposed could be used to build the first working silicon field-effect transistor. This led to the invention of the MOSFET (MOS field-effect transistor) by Mohamed Atalla and Dawon Kahng in 1959. It was the first truly compact transistor that could be miniaturised and mass-produced for a wide range of uses, With its scalability, and much lower power consumption and higher density than bipolar junction transistors, the MOSFET became the most common type of transistor in computers, electronics, and communications technology such as smartphones. The US Patent and Trademark Office calls the MOSFET a "groundbreaking invention that transformed life and culture around the world".

The CMOS (complementary MOS) process was developed by Chih-Tang Sah and Frank Wanlass at Fairchild Semiconductor in 1963. The first report of a floating-gate MOSFET was made by Dawon Kahng and Simon Sze in 1967. FinFET (fin field-effect transistor), a type of 3D multi-gate MOSFET, was developed by Digh Hisamoto and his team of researchers at Hitachi Central Research Laboratory in 1989.