Memristor

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Memristor

Memristor developed by the University of Illinois at Urbana-Champaign and National Energy Technology Laboratory
Invented	Leon Chua (1971)
Electronic symbol

A memristor (/ˈmɛmrɪstər/; a portmanteau of memory resistor) is a non-linear two-terminal electrical component relating electric charge and magnetic flux linkage. It was described and named in 1971 by Leon Chua, completing a theoretical quartet of fundamental electrical components which comprises also the resistor, capacitor and inductor.

Chua and Kang later generalized the concept to memristive systems. Such a system comprises a circuit, of multiple conventional components, which mimics key properties of the ideal memristor component and is also commonly referred to as a memristor. Several such memristor system technologies have been developed, notably ReRAM.

The identification of memristive properties in electronic devices has attracted controversy. Experimentally, the ideal memristor has yet to be demonstrated.

As a fundamental electrical component

Conceptual symmetries of resistor, capacitor, inductor, and memristor.

Chua in his 1971 paper identified a theoretical symmetry between the non-linear resistor (voltage vs. current), non-linear capacitor (voltage vs. charge), and non-linear inductor (magnetic flux linkage vs. current). From this symmetry he inferred the characteristics of a fourth fundamental non-linear circuit element, linking magnetic flux and charge, which he called the memristor. In contrast to a linear (or non-linear) resistor the memristor has a dynamic relationship between current and voltage including a memory of past voltages or currents. Other scientists had proposed dynamic memory resistors such as the memistor of Bernard Widrow, but Chua introduced a mathematical generality.

Derivation and characteristics

The memristor was originally defined in terms of a non-linear functional relationship between magnetic flux linkage Φ_m(t) and the amount of electric charge that has flowed, q(t):

${\displaystyle f(\mathrm {\Phi } _{\mathrm {m} }(t),q(t))=0}$

The magnetic flux linkage, Φ_m, is generalized from the circuit characteristic of an inductor. It does not represent a magnetic field here. Its physical meaning is discussed below. The symbol Φ_m may be regarded as the integral of voltage over time.

In the relationship between Φ_m and q, the derivative of one with respect to the other depends on the value of one or the other, and so each memristor is characterized by its memristance function describing the charge-dependent rate of change of flux with charge.

${\displaystyle M(q)={\frac {\mathrm {d} \Phi _{\rm {m}}}{\mathrm {d} q}}}$

Substituting the flux as the time integral of the voltage, and charge as the time integral of current, the more convenient forms are;

${\displaystyle M(q(t))={\cfrac {\mathrm {d} \Phi _{\rm {}}/\mathrm {d} t}{\mathrm {d} q/\mathrm {d} t}}={\frac {V(t)}{I(t)}}}$

To relate the memristor to the resistor, capacitor, and inductor, it is helpful to isolate the term M(q), which characterizes the device, and write it as a differential equation.

Device	Characteristic property (units)	Differential equation
Resistor (R)	Resistance (V / A, or ohm, Ω)	R = dV / dI
Capacitor (C)	Capacitance (C / V, or farad)	C = dq / dV
Inductor (L)	Inductance (Wb / A, or henry)	L = dΦm / dI
Memristor (M)	Memristance (Wb / C, or ohm)	M = dΦm / dq

The above table covers all meaningful ratios of differentials of I, q, Φ_m, and V. No device can relate dI to dq, or dΦ_m to dV, because I is the derivative of q and Φ_m is the integral of V.

It can be inferred from this that memristance is charge-dependent resistance. If M(q(t)) is a constant, then we obtain Ohm's Law R(t) = V(t)/I(t). If M(q(t)) is nontrivial, however, the equation is not equivalent because q(t) and M(q(t)) can vary with time. Solving for voltage as a function of time produces

${\displaystyle V(t)=\ M(q(t))I(t)}$

This equation reveals that memristance defines a linear relationship between current and voltage, as long as M does not vary with charge. Nonzero current implies time varying charge. Alternating current, however, may reveal the linear dependence in circuit operation by inducing a measurable voltage without net charge movement—as long as the maximum change in q does not cause much change in M.

Furthermore, the memristor is static if no current is applied. If I(t) = 0, we find V(t) = 0 and M(t) is constant. This is the essence of the memory effect.

Analogously, we can define a ${\displaystyle W(\phi (t))}$ as menductance.

${\displaystyle i(t)=W(\phi (t))v(t)}$

The power consumption characteristic recalls that of a resistor, I²R.

${\displaystyle P(t)=\ I(t)V(t)=\ I^{2}(t)M(q(t))}$

As long as M(q(t)) varies little, such as under alternating current, the memristor will appear as a constant resistor. If M(q(t)) increases rapidly, however, current and power consumption will quickly stop.

M(q) is physically restricted to be positive for all values of q (assuming the device is passive and does not become superconductive at some q). A negative value would mean that it would perpetually supply energy when operated with alternating current.

Modelling and validation

In order to understand the nature of memristor function, some knowledge of fundamental circuit theoretic concepts is useful, starting with the concept of device modelling.

Engineers and scientists seldom analyze a physical system in its original form. Instead, they construct a model which approximates the behaviour of the system. By analyzing the behaviour of the model, they hope to predict the behaviour of the actual system. The primary reason for constructing models is that physical systems are usually too complex to be amenable to a practical analysis.

In the 20th century, work was done on devices where researchers did not recognize the memristive characteristics. This has raised the suggestion that such devices should be recognised as memristors. Pershin and Di Ventra have proposed a test that can help to resolve some of the long-standing controversies about whether an ideal memristor does actually exist or is a purely mathematical concept.

The rest of this article primarily addresses memristors as related to ReRAM devices, since the majority of work since 2008 has been concentrated in this area.

Superconducting memristor component

Dr. Paul Penfield, in a 1974 MIT technical report mentions the memristor in connection with Josephson junctions. This was an early use of the word "memristor" in the context of a circuit device.

One of the terms in the current through a Josephson junction is of the form:

${\displaystyle {\begin{aligned}i_{M}(v)&=\epsilon \cos(\phi _{0})v\\&=W(\phi _{0})v\end{aligned}}}$

where ${\displaystyle \epsilon }$ is a constant based on the physical superconducting materials, ${\displaystyle v}$ is the voltage across the junction and ${\displaystyle i_{M}}$ is the current through the junction.

Through the late 20th century, research regarding this phase-dependent conductance in Josephson junctions was carried out. A more comprehensive approach to extracting this phase-dependent conductance appeared with Peotta and DiVentra's seminal paper in 2014.

Memristor circuits

Due to the practical difficulty of studying the ideal memristor, we will discuss other electrical devices which can be modelled using memristors. For a mathematical description of a memristive device (systems), see Theory.

A discharge tube can be modelled as a memristive device, with resistance being a function of the number of conduction electrons ${\displaystyle n_{e}}$.

${\displaystyle {\begin{aligned}v_{M}&=R(n_{e})i_{M}\\{\frac {dn_{e}}{dt}}&=\beta n+\alpha R(n_{e})i_{M}^{2}\end{aligned}}}$

${\displaystyle v_{M}}$ is the voltage across the discharge tube, ${\displaystyle i_{M}}$ is the current flowing through it and ${\displaystyle n_{e}}$ is the number of conduction electrons. A simple memristance function is ${\displaystyle R(n_{e})={\frac {F}{n_{e}}}}$. ${\displaystyle \alpha ,\beta }$ and ${\displaystyle F}$ are parameters depending on the dimensions of the tube and the gas fillings. An experimental identification of memristive behaviour is the "pinched hysteresis loop" in the ${\displaystyle v-i}$ plane. For an experiment that shows such a characteristic for a common discharge tube, see "A physical memristor Lissajous figure" (YouTube). The video also illustrates how to understand deviations in the pinched hysteresis characteristics of physical memristors.

Thermistors can be modelled as memristive devices.

${\displaystyle {\begin{aligned}v&=R_{0}(T_{0})\exp \left[\beta \left({\frac {1}{T}}-{\frac {1}{T_{0}}}\right)\right]i\\&\equiv R(T)i\\{\frac {dT}{dt}}&={\frac {1}{C}}\left[-\delta \cdot (T-T_{0})+R(T)i^{2}\right]\end{aligned}}}$

${\displaystyle \beta }$ is a material constant, ${\displaystyle T}$ is the absolute body temperature of the thermistor, ${\displaystyle T_{0}}$ is the ambient temperature (both temperatures in Kelvin), ${\displaystyle R_{0}(T_{0})}$ denotes the cold temperature resistance at ${\displaystyle T=T_{0}}$, ${\displaystyle C}$ is the heat capacitance and ${\displaystyle \delta }$ is the dissipation constant for the thermistor.

A fundamental phenomenon that has hardly been studied is memristive behaviour in pn-junctions. The memristor plays a crucial role in mimicking the charge storage effect in the diode base, and is also responsible for the conductivity modulation phenomenon (that is so important during forward transients).

Criticisms

In 2008, a team at HP Labs claimed to have found Chua's missing memristor based on an analysis of a thin film of titanium dioxide, thus connecting the operation of ReRAM devices to the memristor concept. According to HP Labs, the memristor would operate in the following way: the memristor's electrical resistance is not constant but depends on the current that had previously flowed through the device, i.e., its present resistance depends on how much electric charge has previously flowed through it and in what direction; the device remembers its history—the so-called non-volatility property. When the electric power supply is turned off, the memristor remembers its most recent resistance until it is turned on again.

The HP Labs result was published in the scientific journal Nature. Following this claim, Leon Chua has argued that the memristor definition could be generalized to cover all forms of two-terminal non-volatile memory devices based on resistance switching effects. Chua also argued that the memristor is the oldest known circuit element, with its effects predating the resistor, capacitor, and inductor. There are, however, some serious doubts as to whether a genuine memristor can actually exist in physical reality. Additionally, some experimental evidence contradicts Chua's generalization since a non-passive nanobattery effect is observable in resistance switching memory. A simple test has been proposed by Pershin and Di Ventra to analyze whether such an ideal or generic memristor does actually exist or is a purely mathematical concept. Up to now, there seems to be no experimental resistance switching device (ReRAM) which can pass the test.

These devices are intended for applications in nanoelectronic memory devices, computer logic, and neuromorphic/neuromemristive computer architectures. In 2013, Hewlett-Packard CTO Martin Fink suggested that memristor memory may become commercially available as early as 2018. In March 2012, a team of researchers from HRL Laboratories and the University of Michigan announced the first functioning memristor array built on a CMOS chip.

An array of 17 purpose-built oxygen-depleted titanium dioxide memristors built at HP Labs, imaged by an atomic force microscope. The wires are about 50 nm, or 150 atoms, wide. Electric current through the memristors shifts the oxygen vacancies, causing a gradual and persistent change in electrical resistance.

According to the original 1971 definition, the memristor is the fourth fundamental circuit element, forming a non-linear relationship between electric charge and magnetic flux linkage. In 2011, Chua argued for a broader definition that includes all 2-terminal non-volatile memory devices based on resistance switching. Williams argued that MRAM, phase-change memory and ReRAM are memristor technologies. Some researchers argued that biological structures such as blood and skin fit the definition. Others argued that the memory device under development by HP Labs and other forms of ReRAM are not memristors, but rather part of a broader class of variable-resistance systems, and that a broader definition of memristor is a scientifically unjustifiable land grab that favored HP's memristor patents.

In 2011, Meuffels and Schroeder noted that one of the early memristor papers included a mistaken assumption regarding ionic conduction. In 2012, Meuffels and Soni discussed some fundamental issues and problems in the realization of memristors. They indicated inadequacies in the electrochemical modeling presented in the Nature article "The missing memristor found" because the impact of concentration polarization effects on the behavior of metal−TiO_2−x−metal structures under voltage or current stress was not considered. This critique was referred to by Valov et al. in 2013.

In a kind of thought experiment, Meuffels and Soni furthermore revealed a severe inconsistency: If a current-controlled memristor with the so-called non-volatility property exists in physical reality, its behavior would violate Landauer's principle, which places a limit on the minimum amount of energy required to change "information" states of a system. This critique was finally adopted by Di Ventra and Pershin in 2013.

Within this context, Meuffels and Soni pointed to a fundamental thermodynamic principle: Non-volatile information storage requires the existence of free-energy barriers that separate the distinct internal memory states of a system from each other; otherwise, one would be faced with an "indifferent" situation, and the system would arbitrarily fluctuate from one memory state to another just under the influence of thermal fluctuations. When unprotected against thermal fluctuations, the internal memory states exhibit some diffusive dynamics, which causes state degradation. The free-energy barriers must therefore be high enough to ensure a low bit-error probability of bit operation. Consequently, there is always a lower limit of energy requirement – depending on the required bit-error probability – for intentionally changing a bit value in any memory device.

In the general concept of memristive system the defining equations are (see Theory):

${\displaystyle {\begin{aligned}y(t)&=g(\mathbf {x} ,u,t)u(t),\\{\dot {\mathbf {x} }}&=f(\mathbf {x} ,u,t),\end{aligned}}}$

where u(t) is an input signal, and y(t) is an output signal. The vector x represents a set of n state variables describing the different internal memory states of the device. ẋ is the time-dependent rate of change of the state vector x with time.

When one wants to go beyond mere curve fitting and aims at a real physical modeling of non-volatile memory elements, e.g., resistive random-access memory devices, one has to keep an eye on the aforementioned physical correlations. To check the adequacy of the proposed model and its resulting state equations, the input signal u(t) can be superposed with a stochastic term ξ(t), which takes into account the existence of inevitable thermal fluctuations. The dynamic state equation in its general form then finally reads:

${\displaystyle {\dot {\mathbf {x} }}=f(\mathbf {x} ,u(t)+\xi (t),t),}$

where ξ(t) is, e.g., white Gaussian current or voltage noise. On base of an analytical or numerical analysis of the time-dependent response of the system towards noise, a decision on the physical validity of the modeling approach can be made, e.g., would the system be able to retain its memory states in power-off mode?

Such an analysis was performed by Di Ventra and Pershin with regard to the genuine current-controlled memristor. As the proposed dynamic state equation provides no physical mechanism enabling such a memristor to cope with inevitable thermal fluctuations, a current-controlled memristor would erratically change its state in course of time just under the influence of current noise. Di Ventra and Pershin thus concluded that memristors whose resistance (memory) states depend solely on the current or voltage history would be unable to protect their memory states against unavoidable Johnson–Nyquist noise and permanently suffer from information loss, a so-called "stochastic catastrophe". A current-controlled memristor can thus not exist as a solid-state device in physical reality.

The above-mentioned thermodynamic principle furthermore implies that the operation of 2-terminal non-volatile memory devices (e.g. "resistance-switching" memory devices (ReRAM)) cannot be associated with the memristor concept, i.e., such devices cannot by itself remember their current or voltage history. Transitions between distinct internal memory or resistance states are of probabilistic nature. The probability for a transition from state {i} to state {j} depends on the height of the free-energy barrier between both states. The transition probability can thus be influenced by suitably driving the memory device, i.e., by "lowering" the free-energy barrier for the transition {i} → {j} by means of, for example, an externally applied bias.

A "resistance switching" event can simply be enforced by setting the external bias to a value above a certain threshold value. This is the trivial case, i.e., the free-energy barrier for the transition {i} → {j} is reduced to zero. In case one applies biases below the threshold value, there is still a finite probability that the device will switch in course of time (triggered by a random thermal fluctuation), but – as one is dealing with probabilistic processes – it is impossible to predict when the switching event will occur. That is the basic reason for the stochastic nature of all observed resistance-switching (ReRAM) processes. If the free-energy barriers are not high enough, the memory device can even switch without having to do anything.

When a 2-terminal non-volatile memory device is found to be in a distinct resistance state {j}, there exists therefore no physical one-to-one relationship between its present state and its foregoing voltage history. The switching behavior of individual non-volatile memory devices thus cannot be described within the mathematical framework proposed for memristor/memristive systems.

An extra thermodynamic curiosity arises from the definition that memristors/memristive devices should energetically act like resistors. The instantaneous electrical power entering such a device is completely dissipated as Joule heat to the surrounding, so no extra energy remains in the system after it has been brought from one resistance state x_i to another one x_j. Thus, the internal energy of the memristor device in state x_i, U(V, T, x_i), would be the same as in state x_j, U(V, T, x_j), even though these different states would give rise to different device's resistances, which itself must be caused by physical alterations of the device's material.

Other researchers noted that memristor models based on the assumption of linear ionic drift do not account for asymmetry between set time (high-to-low resistance switching) and reset time (low-to-high resistance switching) and do not provide ionic mobility values consistent with experimental data. Non-linear ionic-drift models have been proposed to compensate for this deficiency.

A 2014 article from researchers of ReRAM concluded that Strukov's (HP's) initial/basic memristor modeling equations do not reflect the actual device physics well, whereas subsequent (physics-based) models such as Pickett's model or Menzel's ECM model (Menzel is a co-author of that article) have adequate predictability, but are computationally prohibitive. As of 2014, the search continues for a model that balances these issues; the article identifies Chang's and Yakopcic's models as potentially good compromises.

Martin Reynolds, an electrical engineering analyst with research outfit Gartner, commented that while HP was being sloppy in calling their device a memristor, critics were being pedantic in saying that it was not a memristor.

Experimental tests

Chua suggested experimental tests to determine if a device may properly be categorized as a memristor:

• The Lissajous curve in the voltage-current plane is a pinched hysteresis loop when driven by any bipolar periodic voltage or current without respect to initial conditions.
• The area of each lobe of the pinched hysteresis loop shrinks as the frequency of the forcing signal increases.
• As the frequency tends to infinity, the hysteresis loop degenerates to a straight line through the origin, whose slope depends on the amplitude and shape of the forcing signal.

According to Chua all resistive switching memories including ReRAM, MRAM and phase-change memory meet these criteria and are memristors. However, the lack of data for the Lissajous curves over a range of initial conditions or over a range of frequencies complicates assessments of this claim.

Experimental evidence shows that redox-based resistance memory (ReRAM) includes a nanobattery effect that is contrary to Chua's memristor model. This indicates that the memristor theory needs to be extended or corrected to enable accurate ReRAM modeling.

Theory

In 2008 researchers from HP Labs introduced a model for a memristance function based on thin films of titanium dioxide. For R_ON ≪ R_OFF the memristance function was determined to be

${\displaystyle M(q(t))=R_{\mathrm {OFF} }\cdot \left(1-{\frac {\mu _{v}R_{\mathrm {ON} }}{D^{2}}}q(t)\right)}$

where R_OFF represents the high resistance state, R_ON represents the low resistance state, μ_v represents the mobility of dopants in the thin film, and D represents the film thickness. The HP Labs group noted that "window functions" were necessary to compensate for differences between experimental measurements and their memristor model due to non-linear ionic drift and boundary effects.

Operation as a switch

For some memristors, applied current or voltage causes substantial change in resistance. Such devices may be characterized as switches by investigating the time and energy that must be spent to achieve a desired change in resistance. This assumes that the applied voltage remains constant. Solving for energy dissipation during a single switching event reveals that for a memristor to switch from R_on to R_off in time T_on to T_off, the charge must change by ΔQ = Q_on−Q_off.

${\displaystyle E_{\mathrm {switch} }=\ V^{2}\int _{T_{\mathrm {off} }}^{T_{\mathrm {on} }}{\frac {\mathrm {d} t}{M(q(t))}}=\ V^{2}\int _{Q_{\mathrm {off} }}^{Q_{\mathrm {on} }}{\frac {\mathrm {d} q}{I(q)M(q)}}=\ V^{2}\int _{Q_{\mathrm {off} }}^{Q_{\mathrm {on} }}{\frac {\mathrm {d} q}{V(q)}}=\ V\Delta Q}$

Substituting V = I(q)M(q), and then ∫dq/V = ∆Q/V for constant VTo produces the final expression. This power characteristic differs fundamentally from that of a metal oxide semiconductor transistor, which is capacitor-based. Unlike the transistor, the final state of the memristor in terms of charge does not depend on bias voltage.

The type of memristor described by Williams ceases to be ideal after switching over its entire resistance range, creating hysteresis, also called the "hard-switching regime". Another kind of switch would have a cyclic M(q) so that each off-on event would be followed by an on-off event under constant bias. Such a device would act as a memristor under all conditions, but would be less practical.

Memristive systems

In the more general concept of an n-th order memristive system the defining equations are

${\displaystyle {\begin{aligned}y(t)&=g({\textbf {x}},u,t)u(t),\\{\dot {\textbf {x}}}&=f({\textbf {x}},u,t)\end{aligned}}}$

where u(t) is an input signal, y(t) is an output signal, the vector x represents a set of n state variables describing the device, and g and f are continuous functions. For a current-controlled memristive system the signal u(t) represents the current signal i(t) and the signal y(t) represents the voltage signal v(t). For a voltage-controlled memristive system the signal u(t) represents the voltage signal v(t) and the signal y(t) represents the current signal i(t).

The pure memristor is a particular case of these equations, namely when x depends only on charge (x = q) and since the charge is related to the current via the time derivative dq/dt = i(t). Thus for pure memristors f (i.e. the rate of change of the state) must be equal or proportional to the current i(t) .

Pinched hysteresis

Example of pinched hysteresis curve, V versus I

One of the resulting properties of memristors and memristive systems is the existence of a pinched hysteresis effect. For a current-controlled memristive system, the input u(t) is the current i(t), the output y(t) is the voltage v(t), and the slope of the curve represents the electrical resistance. The change in slope of the pinched hysteresis curves demonstrates switching between different resistance states which is a phenomenon central to ReRAM and other forms of two-terminal resistance memory. At high frequencies, memristive theory predicts the pinched hysteresis effect will degenerate, resulting in a straight line representative of a linear resistor. It has been proven that some types of non-crossing pinched hysteresis curves (denoted Type-II) cannot be described by memristors.

Extended systems

Some researchers have raised the question of the scientific legitimacy of HP's memristor models in explaining the behavior of ReRAM. and have suggested extended memristive models to remedy perceived deficiencies.

One example attempts to extend the memristive systems framework by including dynamic systems incorporating higher-order derivatives of the input signal u(t) as a series expansion

${\displaystyle {\begin{aligned}y(t)&=g_{0}({\textbf {x}},u)u(t)+g_{1}({\textbf {x}},u){\operatorname {d} ^{2}u \over \operatorname {d} t^{2}}+g_{2}({\textbf {x}},u){\operatorname {d} ^{4}u \over \operatorname {d} t^{4}}+\ldots +g_{m}({\textbf {x}},u){\operatorname {d} ^{2m}u \over \operatorname {d} t^{2m}},\\{\dot {\textbf {x}}}&=f({\textbf {x}},u)\end{aligned}}}$

where m is a positive integer, u(t) is an input signal, y(t) is an output signal, the vector x represents a set of n state variables describing the device, and the functions g and f are continuous functions. This equation produces the same zero-crossing hysteresis curves as memristive systems but with a different frequency response than that predicted by memristive systems.

Another example suggests including an offset value ${\displaystyle a}$ to account for an observed nanobattery effect which violates the predicted zero-crossing pinched hysteresis effect.

${\displaystyle {\begin{aligned}y(t)&=g_{0}({\textbf {x}},u)(u(t)-a),\\{\dot {\textbf {x}}}&=f({\textbf {x}},u)\end{aligned}}}$

Implementations

Titanium dioxide memristor

Interest in the memristor revived when an experimental solid-state version was reported by R. Stanley Williams of Hewlett Packard in 2007. The article was the first to demonstrate that a solid-state device could have the characteristics of a memristor based on the behavior of nanoscale thin films. The device neither uses magnetic flux as the theoretical memristor suggested, nor stores charge as a capacitor does, but instead achieves a resistance dependent on the history of current.

Although not cited in HP's initial reports on their TiO₂ memristor, the resistance switching characteristics of titanium dioxide were originally described in the 1960s.

The HP device is composed of a thin (50 nm) titanium dioxide film between two 5 nm thick electrodes, one titanium, the other platinum. Initially, there are two layers to the titanium dioxide film, one of which has a slight depletion of oxygen atoms. The oxygen vacancies act as charge carriers, meaning that the depleted layer has a much lower resistance than the non-depleted layer. When an electric field is applied, the oxygen vacancies drift (see Fast ion conductor), changing the boundary between the high-resistance and low-resistance layers. Thus the resistance of the film as a whole is dependent on how much charge has been passed through it in a particular direction, which is reversible by changing the direction of current. Since the HP device displays fast ion conduction at nanoscale, it is considered a nanoionic device.

Memristance is displayed only when both the doped layer and depleted layer contribute to resistance. When enough charge has passed through the memristor that the ions can no longer move, the device enters hysteresis. It ceases to integrate q=∫I dt, but rather keeps q at an upper bound and M fixed, thus acting as a constant resistor until current is reversed.

Memory applications of thin-film oxides had been an area of active investigation for some time. IBM published an article in 2000 regarding structures similar to that described by Williams. Samsung has a U.S. patent for oxide-vacancy based switches similar to that described by Williams. Williams also has a U.S. patent application related to the memristor construction.

In April 2010, HP labs announced that they had practical memristors working at 1 ns (~1 GHz) switching times and 3 nm by 3 nm sizes, which bodes well for the future of the technology. At these densities it could easily rival the current sub-25 nm flash memory technology.

Polymeric memristor

In 2004, Krieger and Spitzer described dynamic doping of polymer and inorganic dielectric-like materials that improved the switching characteristics and retention required to create functioning nonvolatile memory cells. They used a passive layer between electrode and active thin films, which enhanced the extraction of ions from the electrode. It is possible to use fast ion conductor as this passive layer, which allows a significant reduction of the ionic extraction field.

In July 2008, Erokhin and Fontana claimed to have developed a polymeric memristor before the more recently announced titanium dioxide memristor.

In 2010, Alibart, Gamrat, Vuillaume et al. introduced a new hybrid organic/nanoparticle device (the NOMFET : Nanoparticle Organic Memory Field Effect Transistor), which behaves as a memristor and which exhibits the main behavior of a biological spiking synapse. This device, also called a synapstor (synapse transistor), was used to demonstrate a neuro-inspired circuit (associative memory showing a pavlovian learning).

In 2012, Crupi, Pradhan and Tozer described a proof of concept design to create neural synaptic memory circuits using organic ion-based memristors. The synapse circuit demonstrated long-term potentiation for learning as well as inactivity based forgetting. Using a grid of circuits, a pattern of light was stored and later recalled. This mimics the behavior of the V1 neurons in the primary visual cortex that act as spatiotemporal filters that process visual signals such as edges and moving lines.

Layered memristor

In 2014, Bessonov et al. reported a flexible memristive device comprising a MoO_x/MoS₂ heterostructure sandwiched between silver electrodes on a plastic foil. The fabrication method is entirely based on printing and solution-processing technologies using two-dimensional layered transition metal dichalcogenides (TMDs). The memristors are mechanically flexible, optically transparent and produced at low cost. The memristive behaviour of switches was found to be accompanied by a prominent memcapacitive effect. High switching performance, demonstrated synaptic plasticity and sustainability to mechanical deformations promise to emulate the appealing characteristics of biological neural systems in novel computing technologies.

Atomristor

Atomristor is defined as the electrical devices showing memristive behavior in atomically thin nanomaterials or atomic sheets. In 2018, Ge and Wu et al. first reported a universal memristive effect in single-layer TMD (MX₂, M = Mo, W; and X = S, Se) atomic sheets based on vertical metal-insulator-metal (MIM) device structure. These atomristors offer forming-free switching and both unipolar and bipolar operation. The switching behavior is found in single-crystalline and poly-crystalline films, with various metallic electrodes (gold, silver and graphene). Atomically thin TMD sheets are prepared via CVD/MOCVD, enabling low-cost fabrication. Afterwards, taking advantage of the low "on" resistance and large on/off ratio, a high-performance zero-power RF switch is proved based on MoS₂ atomristors, indicating a new application of memristors.

Ferroelectric memristor

The ferroelectric memristor is based on a thin ferroelectric barrier sandwiched between two metallic electrodes. Switching the polarization of the ferroelectric material by applying a positive or negative voltage across the junction can lead to a two order of magnitude resistance variation: R_OFF ≫ R_ON (an effect called Tunnel Electro-Resistance). In general, the polarization does not switch abruptly. The reversal occurs gradually through the nucleation and growth of ferroelectric domains with opposite polarization. During this process, the resistance is neither R_ON or R_OFF, but in between. When the voltage is cycled, the ferroelectric domain configuration evolves, allowing a fine tuning of the resistance value. The ferroelectric memristor's main advantages are that ferroelectric domain dynamics can be tuned, offering a way to engineer the memristor response, and that the resistance variations are due to purely electronic phenomena, aiding device reliability, as no deep change to the material structure is involved.

Carbon nanotube memristor

In 2013, Ageev, Blinov et al. reported observing memristor effect in structure based on vertically aligned carbon nanotubes studying bundles of CNT by scanning tunneling microscope.

Later it was found that CNT memristive switching is observed when a nanotube has a non-uniform elastic strain ΔL0. It was shown that the memristive switching mechanism of strained СNT is based on the formation and subsequent redistribution of non-uniform elastic strain and piezoelectric field Edef in the nanotube under the influence of an external electric field E(x,t).

Biomolecular memristor

Biomaterials have been evaluated for use in artificial synapses and have shown potential for application in neuromorphic systems. In particular, the feasibility of using a collagen‐based biomemristor as an artificial synaptic device has been investigated, whereas a synaptic device based on lignin demonstrated rising or lowering current with consecutive voltage sweeps depending on the sign of the voltage furthermore a natural silk fibroin demonstrated memristive properties; spin-memristive systems based on biomolecules are also being studied.

Spin memristive systems

Spintronic memristor

Chen and Wang, researchers at disk-drive manufacturer Seagate Technology described three examples of possible magnetic memristors. In one device resistance occurs when the spin of electrons in one section of the device points in a different direction from those in another section, creating a "domain wall", a boundary between the two sections. Electrons flowing into the device have a certain spin, which alters the device's magnetization state. Changing the magnetization, in turn, moves the domain wall and changes the resistance. The work's significance led to an interview by IEEE Spectrum. A first experimental proof of the spintronic memristor based on domain wall motion by spin currents in a magnetic tunnel junction was given in 2011.

Memristance in a magnetic tunnel junction

The magnetic tunnel junction has been proposed to act as a memristor through several potentially complementary mechanisms, both extrinsic (redox reactions, charge trapping/detrapping and electromigration within the barrier) and intrinsic (spin-transfer torque).

Extrinsic mechanism

Based on research performed between 1999 and 2003, Bowen et al. published experiments in 2006 on a magnetic tunnel junction (MTJ) endowed with bi-stable spin-dependent states (resistive switching). The MTJ consists in a SrTiO3 (STO) tunnel barrier that separates half-metallic oxide LSMO and ferromagnetic metal CoCr electrodes. The MTJ's usual two device resistance states, characterized by a parallel or antiparallel alignment of electrode magnetization, are altered by applying an electric field. When the electric field is applied from the CoCr to the LSMO electrode, the tunnel magnetoresistance (TMR) ratio is positive. When the direction of electric field is reversed, the TMR is negative. In both cases, large amplitudes of TMR on the order of 30% are found. Since a fully spin-polarized current flows from the half-metallic LSMO electrode, within the Julliere model, this sign change suggests a sign change in the effective spin polarization of the STO/CoCr interface. The origin to this multistate effect lies with the observed migration of Cr into the barrier and its state of oxidation. The sign change of TMR can originate from modifications to the STO/CoCr interface density of states, as well as from changes to the tunneling landscape at the STO/CoCr interface induced by CrOx redox reactions.

Reports on MgO-based memristive switching within MgO-based MTJs appeared starting in 2008 and 2009. While the drift of oxygen vacancies within the insulating MgO layer has been proposed to describe the observed memristive effects, another explanation could be charge trapping/detrapping on the localized states of oxygen vacancies and its impact on spintronics. This highlights the importance of understanding what role oxygen vacancies play in the memristive operation of devices that deploy complex oxides with an intrinsic property such as ferroelectricity or multiferroicity.

Intrinsic mechanism

The magnetization state of a MTJ can be controlled by Spin-transfer torque, and can thus, through this intrinsic physical mechanism, exhibit memristive behavior. This spin torque is induced by current flowing through the junction, and leads to an efficient means of achieving a MRAM. However, the length of time the current flows through the junction determines the amount of current needed, i.e., charge is the key variable.

The combination of intrinsic (spin-transfer torque) and extrinsic (resistive switching) mechanisms naturally leads to a second-order memristive system described by the state vector x = (x₁,x₂), where x₁ describes the magnetic state of the electrodes and x₂ denotes the resistive state of the MgO barrier. In this case the change of x₁ is current-controlled (spin torque is due to a high current density) whereas the change of x₂ is voltage-controlled (the drift of oxygen vacancies is due to high electric fields). The presence of both effects in a memristive magnetic tunnel junction led to the idea of a nanoscopic synapse-neuron system.

Spin memristive system

A fundamentally different mechanism for memristive behavior has been proposed by Pershin and Di Ventra. The authors show that certain types of semiconductor spintronic structures belong to a broad class of memristive systems as defined by Chua and Kang. The mechanism of memristive behavior in such structures is based entirely on the electron spin degree of freedom which allows for a more convenient control than the ionic transport in nanostructures. When an external control parameter (such as voltage) is changed, the adjustment of electron spin polarization is delayed because of the diffusion and relaxation processes causing hysteresis. This result was anticipated in the study of spin extraction at semiconductor/ferromagnet interfaces, but was not described in terms of memristive behavior. On a short time scale, these structures behave almost as an ideal memristor. This result broadens the possible range of applications of semiconductor spintronics and makes a step forward in future practical applications.

Self-directed channel memristor

In 2017, Dr Kris Campbell formally introduced the self-directed channel (SDC) memristor. The SDC device is the first memristive device available commercially to researchers, students and electronics enthusiast worldwide. The SDC device is operational immediately after fabrication. In the Ge₂Se₃ active layer, Ge-Ge homopolar bonds are found and switching occurs. The three layers consisting of Ge₂Se₃/Ag/Ge₂Se₃, directly below the top tungsten electrode, mix together during deposition and jointly form the silver-source layer. A layer of SnSe is between these two layers ensuring that the silver-source layer is not in direct contact with the active layer. Since silver does not migrate into the active layer at high temperatures, and the active layer maintains a high glass transition temperature of about 350 °C (662 °F), the device has significantly higher processing and operating temperatures at 250 °C (482 °F) and at least 150 °C (302 °F), respectively. These processing and operating temperatures are higher than most ion-conducting chalcogenide device types, including the S-based glasses (e.g. GeS) that need to be photodoped or thermally annealed. These factors allow the SDC device to operate over a wide range of temperatures, including long-term continuous operation at 150 °C (302 °F).

Potential applications

Memristors remain a laboratory curiosity, as yet made in insufficient numbers to gain any commercial applications. Despite this lack of mass availability, according to Allied Market Research the memristor market was worth $3.2 million in 2015 and will be worth $79.0 million by 2022.

A potential application of memristors is in analog memories for superconducting quantum computers.

Memristors can potentially be fashioned into non-volatile solid-state memory, which could allow greater data density than hard drives with access times similar to DRAM, replacing both components. HP prototyped a crossbar latch memory that can fit 100 gigabits in a square centimeter, and proposed a scalable 3D design (consisting of up to 1000 layers or 1 petabit per cm³). In May 2008 HP reported that its device reaches currently about one-tenth the speed of DRAM. The devices' resistance would be read with alternating current so that the stored value would not be affected. In May 2012, it was reported that the access time had been improved to 90 nanoseconds, which is nearly one hundred times faster than the contemporaneous Flash memory. At the same time, the energy consumption was just one percent of that consumed by Flash memory.

Memristor have applications in programmable logic, signal processing, Super-resolution imaging, physical neural networks, control systems, reconfigurable computing, brain–computer interfaces, and RFID. Memristive devices are potentially used for stateful logic implication, allowing a replacement for CMOS-based logic computation. Several early works have been reported in this direction.

In 2009, a simple electronic circuit consisting of an LC network and a memristor was used to model experiments on adaptive behavior of unicellular organisms. It was shown that subjected to a train of periodic pulses, the circuit learns and anticipates the next pulse similar to the behavior of slime molds Physarum polycephalum where the viscosity of channels in the cytoplasm responds to periodic environment changes. Applications of such circuits may include, e.g., pattern recognition. The DARPA SyNAPSE project funded HP Labs, in collaboration with the Boston University Neuromorphics Lab, has been developing neuromorphic architectures which may be based on memristive systems. In 2010, Versace and Chandler described the MoNETA (Modular Neural Exploring Traveling Agent) model. MoNETA is the first large-scale neural network model to implement whole-brain circuits to power a virtual and robotic agent using memristive hardware. Application of the memristor crossbar structure in the construction of an analog soft computing system was demonstrated by Merrikh-Bayat and Shouraki. In 2011, they showed how memristor crossbars can be combined with fuzzy logic to create an analog memristive neuro-fuzzy computing system with fuzzy input and output terminals. Learning is based on the creation of fuzzy relations inspired from Hebbian learning rule.

In 2013 Leon Chua published a tutorial underlining the broad span of complex phenomena and applications that memristors span and how they can be used as non-volatile analog memories and can mimic classic habituation and learning phenomena.

Derivative devices

Memistor and memtransistor

The memistor and memtransistor are transistor based devices which include memristor function.

Memcapacitors and meminductors

In 2009, Di Ventra, Pershin, and Chua extended the notion of memristive systems to capacitive and inductive elements in the form of memcapacitors and meminductors, whose properties depend on the state and history of the system, further extended in 2013 by Di Ventra and Pershin.

Memfractance and memfractor, 2nd- and 3rd-order memristor, memcapacitor and meminductor

In September 2014, Mohamed-Salah Abdelouahab, Rene Lozi, and Leon Chua published a general theory of 1st-, 2nd-, 3rd-, and nth-order memristive elements using fractional derivatives.

History

Precursors

Sir Humphry Davy is said by some to have performed the first experiments which can be explained by memristor effects as long ago as 1808. However the first device of a related nature to be constructed was the memistor (i.e. memory resistor), a term coined in 1960 by Bernard Widrow to describe a circuit element of an early artificial neural network called ADALINE. A few years later, in 1968, Argall published an article showing the resistance switching effects of TiO₂ which was later claimed by researchers from Hewlett Packard to be evidence of a memristor.

Theoretical description

Leon Chua postulated his new two-terminal circuit element in 1971. It was characterized by a relationship between charge and flux linkage as a fourth fundamental circuit element. Five years later he and his student Sung Mo Kang generalized the theory of memristors and memristive systems including a property of zero crossing in the Lissajous curve characterizing current vs. voltage behavior.

Twenty-first century

On May 1, 2008, Strukov, Snider, Stewart, and Williams published an article in Nature identifying a link between the 2-terminal resistance switching behavior found in nanoscale systems and memristors.

On January 23, 2009, Di Ventra, Pershin, and Chua extended the notion of memristive systems to capacitive and inductive elements, namely capacitors and inductors, whose properties depend on the state and history of the system.

In July 2014, the MeMOSat/LabOSat group (composed of researchers from Universidad Nacional de General San Martín (Argentina), INTI, CNEA, and CONICET) put memory devices into orbit for their study at LEO. Since then, seven missions with different devices are performing experiments in low orbit, onboard Satellogic's Ñu-Sat satellites.

On July 7, 2015 Knowm Inc announced Self Directed Channel (SDC) memristors commercially. These devices remain available in small numbers.

On July 13, 2018 MemSat (Memristor Satellite) was launched to fly a memristor evaluation payload.

Secular religion

From Wikipedia, the free encyclopedia

https://en.wikipedia.org/wiki/Secular_religion 

A secular religion is a communal belief system that often rejects or neglects the metaphysical aspects of the supernatural, commonly associated with traditional religion, instead placing typical religious qualities in earthly entities. Among systems that have been characterized as secular religions are capitalism, nationalism, internationalism, Nazism, fascism, feminism, communism, Maoism, Juche, progressivism, futurism, transhumanism, Religion of Humanity, Jacobinism, and the Cult of Reason and Cult of the Supreme Being that developed after the French Revolution.

Contemporary characterizations

The term secular religion is often applied today to communal belief systems—as for example with the view of love as the postmodern secular religion. Paul Vitz applied the term to modern psychology in as much as it fosters a cult of the self, explicitly calling "the self-theory ethic [...] this secular religion". Sport has also been considered as a new secular religion, particularly with respect to Olympism. For Pierre de Coubertin, founder of the modern Olympic Games, belief in them as a new secular religion was explicit and lifelong.

Political religion

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The theory of political religion concerns governmental ideologies whose cultural and political backing is so strong that they are said to attain power equivalent to those of a state religion, with which they often exhibit significant similarities in both theory and practice. In addition to basic forms of politics, like parliament and elections, it also holds an aspect of "sacralization" related to the institutions contained within the regime and also provides the inner measures traditionally considered to be religious territory, such as ethics, values, symbols, myths, rituals, archetypes and for example a national liturgical calendar.

Political religious organizations, such as the Nazi Party, adhered to the idealization of cultural and political power over the country at large. The church body of the state no longer held control over the practices of religious identity. Because of this, Nazism was countered by many political and religious organizations as being a political religion, based on the dominance which the Nazi regime had (Gates and Steane). Political religions generally vie with existing traditional religions, and may try to replace or eradicate them. The term was given new attention by the political scientist Hans Maier.

Totalitarian societies are perhaps more prone to political religion, but various scholars have described features of political religion even in democracies, for instance American civil religion as described by Robert Bellah in 1967.

The term is sometimes treated as synonymous with civil religion, but although some scholars use the terms equivalently, others see a useful distinction, using "civil religion" as something weaker, which functions more as a socially unifying and essentially conservative force, whereas a political religion is radically transformational, even apocalyptic.

Overview

The term political religion is based on the observation that sometimes political ideologies or political systems display features more commonly associated with religion. Scholars who have studied these phenomena include William Connolly in political science, Christoph Deutschmann in sociology, Emilio Gentile in history, Oliver O'Donovan in theology and others in psychology. A political religion often occupies the same ethical, psychological and sociological space as a traditional religion, and as a result it often displaces or co-opts existing religious organizations and beliefs. The most central marker of a political religion involves the sacralization of politics, for example an overwhelming religious feeling when serving one's country, or the devotion towards the Founding Fathers of the United States. Although a political religion may co-opt existing religious structures or symbolism, it does not itself have any independent spiritual or theocratic elements—it is essentially secular, using religious motifs and methods for political purposes, if it does not reject religious faith outright. Typically, a political religion is considered to be secular, but more radical forms of it are also transcendental.

Origin of the theory

The 18th-century philosopher Jean-Jacques Rousseau (1712–1778) argued that all societies need a religion to hold men together. Because Christianity tended to pull men away from earthly matters, Rousseau advocated a "civil religion" that would create the links necessary for political unity around the state. The Swiss Protestant theologian Adolf Keller (1872–1963) argued that Marxism in the Soviet Union had been transformed into a secular religion. Before emigrating to the United States, the German-born political philosopher Eric Voegelin wrote a book entitled The political religions. Other contributions on "political religion" (or associated terms such as "secular religion", "lay religion" or "public religion") were made by Luigi Sturzo (1871–1959), Paul Tillich (1886–1965), Gerhard Leibholz (1901–1982), Waldemar Gurian (1902–1954), Raymond Aron (1905–1983) and Walter Benjamin (1892–1940). Some saw such "religions" as a response to the existential void and nihilism caused by modernity, mass society and the rise of a bureaucratic state, and in political religions "the rebellion against the religion of God" reached its climax. They also described them as "pseudo-religions", "substitute religions", "surrogate religions", "religions manipulated by man" and "anti-religions". Yale political scientist Juan Linz and others have noted that the secularization of the twentieth century had created a void which could be filled by an ideology claiming a hold on ethical and identical matters as well, making the political religions based on totalitarianism, universalism and messianic missions (such as Manifest Destiny) possible.

An academic journal with the name Totalitarian Movements and Political Religions started publication in 2000. It was renamed Politics, Religion & Ideology in 2011. It is published by Taylor & Francis.

Typical aspects

Key qualities often (not all are always present) shared by political religion include:

• Structural
  • Differentiation between self and other, and demonisation of other (in theistic religion, the differentiation usually depends on adherence to certain dogmas and social behaviours; in political religion, differentiation may be on grounds such as nationality, social attitudes, or membership in "enemy" political parties, instead).
  • A transcendent leadership, either with messianic tendencies, often a charismatic figurehead.
  • Strong, hierarchical organisational structures.
  • The control of education, in order to ensure the security, continuation and the veneration of the existing system.
• Belief
  • A coherent belief system for imposing symbolic meaning on the external world, with an emphasis on security through faith in the system.
  • An intolerance of other ideologies of the same type.
  • A degree of utopianism.
  • The belief that the ideology is in some way natural or obvious, so that (at least for certain groups of people) those who reject it are in some way "blind".
  • A genuine desire on the part of individuals to convert others to the cause.
  • A willingness to place ends over means—in particular, a willingness (for some) to use violence or/and fraud.
  • Fatalism—a belief that the ideology will inevitably triumph in the end.

Not all of these aspects are present in any one political religion; this is only a list of some common aspects.

Suppression of religious beliefs

Political religions sometimes compete with existing religions, and try, if possible, to replace or eradicate them.^[7] Loyalty to other entities, such as a church or a deity, are often viewed as interfering with loyalty to the political religion. The authority of religious leaders also presents a threat to the authority of the political religion. As a result, some or all religious sects may be suppressed or banned. An existing sect may be converted into a state religion, but dogma and personnel may be modified to suit the needs of the party or state. Where there is suppression of religious institutions and beliefs, this might be explicitly accompanied by atheistic doctrine as in state atheism.

Juan Linz has posited the friendly form of separation of church and state as the counterpole of political religion but describes the hostile form of separation of church and state as moving toward political religion as found in totalitarianism.

Absolute loyalty

Loyalty to the state or political party and acceptance of the government/party ideology are paramount. Dissenters may be expelled, ostracized, discriminated against, imprisoned, "re-educated", or killed. Loyalty oaths or membership in a dominant (or sole) political party may be required for employment, obtaining government services, or simply as routine. Criticism of the government may be a serious crime. Enforcement can range from ostracism by one's neighbours to execution. In a political religion, you are either with the system or against it.

Cult of personality

Main article: Cult of personality

A political religion often elevates its leaders to near-godlike status. Displays of leaders in the form of posters or statues may be mandated in public areas and even private homes. Children may be required to learn the state's version of the leaders' biographies in school.

Myths of origin

Political religions often rely on a myth of origin that may have some historical basis but is usually idealized and sacralized. Current leaders may be venerated as descendants of the original fathers. There may also be holy places or shrines that relate to the myth of origin.

Historical cases

Revolutionary France

Main articles: Cult of Reason and Cult of the Supreme Being

 

The Festival of the Supreme Being, by Pierre-Antoine Demachy.

Revolutionary France was well noted for being the first state to reject religion altogether. Radicals intended to replace Christianity with a new state religion, or a deistic ideology. Maximilien Robespierre rejected atheistic ideologies and intended to create a new religion. Churches were closed, and Catholic Mass was forbidden. The Cult of the Supreme Being was well known for its derided festival, which led to the Thermidorian reaction and the fall of Robespierre.

Fascism

Main articles: Fascism and Fascist symbolism

Italian fascism

Main article: Italian fascism

According to Emilio Gentile, "Fascism was the first and prime instance of a modern political religion." "This religion sacralized the state and assigned it the primary educational task of transforming the mentality, the character, and the customs of Italians. The aim was to create a 'new man', a believer in and an observing member of the cult of Fascism."

"The argument [that fascism was a ‘political religion’] tends to involve three main claims: I) that fascism was characterized by a religious form, particularly in terms of language and ritual; II) that fascism was a sacralized form of totalitarianism, which legitimized violence in defence of the nation and regeneration of a fascist 'new man'; and III) that fascism took on many of the functions of religion for a broad swathe of society."

Nazi Germany

Main articles: Nazism and Nazi mysticism

"Among committed [Nazi] believers, a mythic world of eternally strong heroes, demons, fire and sword—in a word, the fantasy world of the nursery—displaced reality." Heinrich Himmler was fascinated by the occult, and sought to turn the SS into the basis of an official state cult.

Soviet Union

See also: Stalin's cult of personality

In 1936 a Protestant priest referred explicitly to communism as a new secular religion. A couple of years later, on the eve of World War II, F. A. Voigt characterised both Marxism and National Socialism as secular religions, akin at a fundamental level in their authoritarianism and messianic beliefs as well as in their eschatological view of human History. Both, he considered, were waging religious war against the liberal enquiring mind of the European heritage.

After the war, the social philosopher Raymond Aron would expand on the exploration of communism in terms of a secular religion; while A. J. P. Taylor, for example, would characterise it as "a great secular religion....the Communist Manifesto must be counted as a holy book in the same class as the Bible".

Klaus-Georg Riegel argued that "Lenin's utopian design of a revolutionary community of virtuosi as a typical political religion of an intelligentsia longing for an inner-worldly salvation, a socialist paradise without exploitation and alienation, to be implanted in the Russian backward society at the outskirts of the industrialised and modernised Western Europe."

Environmental toxicants and fetal development

From Wikipedia, the free encyclopedia

https://en.wikipedia.org/wiki/Environmental_toxicants_and_fetal_development 

Environmental toxicants and fetal development is the impact of different toxic substances from the environment on the development of the fetus. This article deals with potential adverse effects of environmental toxicants on the prenatal development of both the embryo or fetus, as well as pregnancy complications. The human embryo or fetus is relatively susceptible to impact from adverse conditions within the mother's environment. Substandard fetal conditions often cause various degrees of developmental delays, both physical and mental, for the growing baby. Although some variables do occur as a result of genetic conditions pertaining to the father, a great many are directly brought about from environmental toxins that the mother is exposed to.

Various toxins pose a significant hazard to fetuses during development. A 2011 study found that virtually all US pregnant women carry multiple chemicals, including some banned since the 1970s, in their bodies. Researchers detected polychlorinated biphenyls, organochlorine pesticides, perfluorinated compounds, phenols, polybrominated diphenyl ethers, phthalates, polycyclic aromatic hydrocarbons, perchlorate PBDEs, compounds used as flame retardants, and dichlorodiphenyltrichloroethane (DDT), a pesticide banned in the United States in 1972, in the bodies of 99 to 100 percent of the pregnant women they tested. Among other environmental estrogens, Bisphenol A (BPA) was identified in 96 percent of the women surveyed. Several of the chemicals were at the same concentrations that have been associated with negative effects in children from other studies and it is thought that exposure to multiple chemicals can have a greater impact than exposure to only one substance.

Effects

Environmental toxicants can be described separately by what effects they have, such as structural abnormalities, altered growth, functional deficiencies, congenital neoplasia, or even death for the fetus.

Preterm birth

One in ten US babies is born preterm and about 5% have low birth weight. Preterm birth, defined as birth at less than 37 weeks of gestation, is a major basis of infant mortality throughout childhood. Exposures to environmental toxins such as lead, tobacco smoke, and DDT have been linked with an increased risk for spontaneous abortion, low birth weight, or preterm birth.

Structural congenital abnormality

Further information: Teratology and Congenital abnormality

Toxic substances that are capable of causing structural congenital abnormalities can be termed teratogens. They are agents extrinsic to embryo or fetus which exert deleterious effects leading to increased risk of malformation, carcinogenesis, mutagenesis, altered function, deficient growth or pregnancy wastage. Teratogens are classified in four main categories:

• Drugs and chemicals. In addition to environmental chemicals, this category also includes recreational and pharmaceutical drugs in pregnancy.
• Vertically transmitted infections
• Radiation, such as X-rays
• Mechanical forces, such as oligohydramnios

Teratogens affect the fetus by various mechanism including:

• Interfering with cell proliferation rate, such as viral infection and ionization
• Altered biosynthetic pathways, as seen in chromosomal defects
• Abnormal cellular or tissue interactions, as seen in diabetes
• Extrinsic factors
• Threshold interaction of genes with environmental teratogens

Neurodevelopmental disorder

Neuroplastic effects of pollution can give rise to neurodevelopmental disorders.

Many cases of autism are related to particular geographic locations, implying that something in the environment is complementing an at-risk genotype to cause autism in vulnerable individuals. These findings regarding autism are controversial, however, with many researchers believing that increasing rates in certain areas are a consequence of more accurate screening and diagnostic methods, and are not due to any sort of environmental factor.

Toxicants and their effects

Substances which have been found to be particularly harmful are lead (which is stored in the mother's bones), cigarette smoke, alcohol, mercury (a neurological toxicant consumed through fish), carbon dioxide, and ionizing radiation.

Alcohol

Drinking alcohol in pregnancy can result in a range of disorders known as fetal alcohol spectrum disorders. The most severe of these is fetal alcohol syndrome.

Tobacco smoke

Main article: Smoking and pregnancy

Fetal exposure to prenatal tobacco smoke may experience a wide range of behavioral, neurological, and physical difficulties. Adverse effects include stillbirth, placental disruption, prematurity, lower mean birth weight, physical birth defects (cleft palate etc.), decrements in lung function, increased risk of infant mortality.

Mercury

Elemental mercury and methylmercury are two forms of mercury that may pose risks of mercury poisoning in pregnancy. Methylmercury, a worldwide contaminant of seafood and freshwater fish, is known to produce adverse nervous system effects, especially during brain development. Eating fish is the main source of mercury exposure in humans and some fish may contain enough mercury to harm the developing nervous system of an embryo or fetus, sometimes leading to learning disabilities. Mercury is present in many types of fish, but it is mostly found in certain large fish. One well-documented case of widespread mercury ingestion and subsequent fetal development complication took place in the 1950s in Minamata Bay, Japan. Used by a nearby industrial plant in the manufacture of plastics, methyl mercury was discharged into the waters of Minamata Bay, where it went on to be ingested regularly by many villagers who used the fish living in the bay as a dietary staple. Soon, many of the inhabitants who had been consuming the mercury-laden meat began experiencing negative effects from ingesting the toxin; however, the mercury especially impacted pregnant women and their fetuses, resulting in a high rate of miscarriage. Surviving infants exposed to mercury in-utero had extremely high rates of physical and mental handicaps, as well as physical abnormalities from exposure in the womb during key stages in fetal physical development. The United States Food and Drug Administration and the Environmental Protection Agency advise pregnant women not to eat swordfish, shark, king mackerel and tilefish and limit consumption of albacore tuna to 6 ounces or less a week.

High mercury levels in newborns in Gaza are theorized to originate from war weaponry.

Mercury exposure in pregnancy may also cause limb defects.

Lead

Adverse effects of lead exposure in pregnancy include miscarriage, low birth weight, neurological delays, anemia, encephalopathy, paralysis, and blindness.

The developing nervous system of the fetus is particularly vulnerable to lead toxicity. Neurological toxicity is observed in children of exposed women as a result of the ability of lead to cross the placental barrier. A special concern for pregnant women is that some of the bone lead accumulation is released into the blood during pregnancy. Several studies have provided evidence that even low maternal exposures to lead produce intellectual and behavioral deficits in children.

Dioxin

Dioxins and dioxin-like compounds persists in the environment for a long time and are widespread, so all people have some amount of dioxins in the body. Intrauterine exposure to dioxins and dioxin-like compounds have been associated with subtle developmental changes on the fetus. Effects on the child later in life include changes in liver function, thyroid hormone levels, white blood cell levels, and decreased performance in tests of learning and intelligence.

Air pollution

Air pollution can negatively affect a pregnancy resulting in higher rates of preterm births, growth restriction, and heart and lung problems in the infant.

Compounds such as carbon monoxide, sulfur dioxide and nitrogen dioxide all have the potential to cause serious damage when inhaled by an expecting mother. Low birth weight, preterm birth, intrauterine growth retardation, and congenital abnormalities have all been found to be associated with fetal exposure to air pollution. Although pollution can be found virtually everywhere, there are specific sources that have been known to release toxic substances and should be avoided if possible by those who wish to remain relatively free of toxins. These substances include, but are not limited to: steel mills, waste/water treatment plants, sewage incinerators, automotive fabrication plants, oil refineries, and chemical manufacturing plants.

Control of air pollution can be difficult. For example, in Los Angeles, regulations have been made to control pollution by putting rules on industrial and vehicle emissions. Improvements have been made to meet these regulations. Despite these improvements, the region still does not meet federal standards for ozone and particulate matter. Approximately 150,000 births occur every year in Los Angeles. Thus, any effects air pollution has on human development in utero are of great concern to those who live in this region.

Particulate matter (PM) consist of a mixture of particle pollutants that remain in the air, and vary be region. These particles are very small, ranging from PM10 to PM 2.5, which can easily enter the lungs. Particulate matter has been shown to be associated with acute cardio-respiratory morbidity and mortality. Intrauterine growth has been shown to be affected by particulate matter, leading to unhealthy outcomes for fetal development such as poor or slow fetal growth, and increasing fetal morbidity and mortality. A study from 2012 found that exposures to PM 2.5 differed by race/ethnicity, age, as well as socioeconomic status, leading to certain populations experiencing greater negative health outcomes due to environmental pollution, especially relating to particulate matter.

Pesticides

Pesticides are created for the specific purpose of causing harm (to insects, rodents, and other pests), pesticides have the potential to serious damages to a developing fetus, should they be introduced into the fetal environment. Studies have shown that pesticides, particularly fungicides, have shown up in analyses of infant's cord blood, proving that such toxins are indeed transferred into the baby's body. Overall, the two pesticides most frequently detected in cord blood are diethyltoluamide (DEET) and vinclozolin (a fungicide). Although pesticide toxicity is not as frequently mentioned as some of the other methods of environmental toxicity, such as air pollution, contamination can occur at any time from merely engaging in everyday activities such as walking down a pathway near a contaminated area, or eating foods that have not been washed properly. In 2007 alone, 1.1 billion pounds of pesticides were found present in the environment, causing pesticide exposure to gain notoriety as a new cause of caution to those wishing to preserve their health.

A 2013 review of 27 studies on prenatal and early childhood exposures to organophosphate pesticides found all but one showed negative neurodevelopmental outcomes. In the ten studies that assessed prenatal exposure, "cognitive deficits (related to working memory) were found in children at age 7 years, behavioral deficits (related to attention) seen mainly in toddlers, and motor deficits (abnormal reflexes), seen mainly in neonates."

A systematic review of neurodevelopmental effects of prenatal and postnatal organophosphate pesticide exposure was done in 2014. The review found that "Most of the studies evaluating prenatal exposure observed a negative effect on mental development and an increase in attention problems in preschool and school children."

In 2017, a study looked at the possible effects of agricultural pesticides in over 500,000 births in a largely agricultural region of California and compared their findings to birth outcomes in other less agriculturally dominated California areas. Overall, they found that pesticide exposure increased adverse birth outcomes by 5–9%, but only among those mothers exposed to the highest quantities of pesticides. 

Benzenes

Benzene exposure in mothers has been linked to fetal brain defects especially neural tube defects. In one study, BTEX (Benzene, toluene, ethylbenzene, xylenes) exposure during the first trimester of pregnancy has been clearly indicating negative association with biparietal brain diameter between 20 and 32 weeks of pregnancy. Women with high exposure to toluene had three to five times the miscarriage rate of those with low exposure, and women with occupational benzene exposure have been shown to have an increased rate of miscarriages. Paternal occupational exposure to toluene and formaldehyde has also been linked to miscarriage in their partners. Normal development is highly controlled by hormones, and disruption by man made chemicals can permanently change the course of development. Ambient ozone has been negatively associated with sperm concentration in men, chemicals associated with UOG operations (e.g., benzene, toluene, formaldehyde, ethylene glycol and ozone) have been associated with negative impacts on semen quality, particularly reduced sperm counts.

A 2011 study found a relationship between Neural Tube Defects and maternal exposure to benzene, a compound associated with natural gas extraction. The study found that mothers living in Texas census tracts with higher ambient benzene levels were more likely to have offspring with neural tube defects, such as spina bifida, than mothers living in areas with lower benzene levels.

Other

• Heat and noise have also been found to have significant effects on development.
• Carbon dioxide – decreased oxygen delivery to brain, intellectual deficiencies
• Ionizing radiation – miscarriage, low birth weight, physical birth defects, childhood cancers
• Environmental exposure to perchlorate in women with hypothyroidism causes a significant risk of low IQ in the child.

Avoiding relevant environmental toxins in pregnancy

The American College of Nurse-Midwives recommends the following precautions to minimize exposure to relevant environmental toxins in pregnancy:

• Avoiding paint supplies such as stained glass material, oil paints and ceramic glazes, and instead using watercolor or acrylic paints and glazes.
• Checking the quality of the tap water or bottled water and changing water drinking habits if necessary.
• If living in a home built before 1978, checking whether lead paint has been used. If such is the case, paint that is crumbling or peeling should not be touched, a professional should remove the paint and the site should be avoided while the paint is removed or sanded.
• To decrease exposure to pesticides; washing all produce thoroughly, peeling the skin from fruits and vegetables or buying organic produce if possible.
• Avoiding any cleaning supply labeled "toxic" or any product with a warning on the label, and instead trying natural products, baking soda, vinegar and/or water to clean.

Natural gas development

In a rural Colorado study of natural gas development, maternal residence within a 10-mile radius of natural gas wells was found to have a positive association to the prevalence of congenital heart defects (CHDs) and neural tube defects (NTDs). Along with this finding, a small association was found between mean birth weight and the density and proximity to the natural gas wells. Maternal exposure through natural gas wells may come in the form of benzene, solvents, polycyclic aromatic hydrocarbons (PAHs), and other air pollutants such as toluene, nitrogen dioxide, and sulfur dioxide.

In Pennsylvania, unconventional natural gas producing wells increased from zero in 2005 to 3689 in 2013. A 2016 study of 9384 mothers and 10946 neonates in the Geisinger Health System in Pennsylvania found prenatal residential exposure to unconventional natural gas development activity was associated with preterm birth and physician-recorded high-risk pregnancy. In Southwest Pennsylvania, maternal proximity to unconventional gas drilling has been found to be associated with decreased birth weight. It was unclear which route of exposure: air, soil or water could be attributed to the association. Further research and larger studies on this topic are needed.

Endocrine disruptors are compounds that can disrupt the normal development and normal hormone levels in humans. Endocrine-disrupting chemicals (EDCs) can interact with hormone receptors, as well as change hormone concentrations within the body, leading to incorrect hormone responses in the body as well as disrupt normal enzyme functioning. Oil and gas extraction has been known to contribute to EDCs in the environment, largely due to the high risk of ground and surface water contamination that comes with these extractions. In addition to water contamination, oil and gas extraction also lead to higher levels of air pollution, creating another route of exposure for these endocrine disruptors. This problem often goes under-reported, and therefore, the true magnitude of the impact is underestimated. In 2016, a study was conducted to assess the need for an endocrine component to health assessments for drilling and extraction of oil and gas in densely populated areas. With the high potential for release of oil and gas chemicals with extraction, specifically chemicals that have been shown to disrupt normal hormone production and function, the authors highly emphasized the need for a component centering around endocrine function and overall health with health assessments, and how this in turn impacts the environment.

Role of the placenta

The healthy placenta is a semipermeable membrane that does form a barrier for most pathogens and for certain xenobiotic substances. However, it is by design an imperfect barrier since it must transport substances required for growth and development. Placental transport can be by passive diffusion for smaller molecules that are lipid soluble or by active transport for substances that are larger and/or electrically charged. Some toxic chemicals may be actively transported. The dose of a substance received by the fetus is determined by the amount of the substance transported across the placenta as well as the rate of metabolism and elimination of the substance. As the fetus has an immature metabolism, it is unable to detoxify substances very efficiently; and as the placenta plays such an important role in substance exchange between the mother and the fetus, it goes without saying that any toxic substances that the mother is exposed to are transported to the fetus, where they can then affect development. Carbon-dioxide, lead, ethanol (alcohol), and cigarette smoke in particular are all substances that have a high likelihood of placental transferral.

Identifying potential hazards for fetal development requires a basis of scientific information. In 2004, Brent proposed a set of criteria for identifying causes of congenital malformations that also are applicable to developmental toxicity in general. Those criteria are:

• Well-conducted epidemiology studies consistently show a relationship between particular effects and exposure to the substance.
• Data trends support a relationship between changing levels of exposure and the specific effect.
• Animal studies provide evidence of the correlation between substance exposures and particular effects.