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Tuesday, February 19, 2019

Integrated circuit (updated)

From Wikipedia, the free encyclopedia

Erasable Programmable Read-Only Memory (EPROM) integrated circuits. These packages have a transparent window that shows the die inside. The window is used to erase the memory by exposing the chip to ultraviolet light.
 
Integrated circuit from an EPROM memory microchip showing the memory blocks, the supporting circuitry and the fine silver wires which connect the integrated circuit die to the legs of the packaging.
 
Virtual detail of an integrated circuit through four layers of planarized copper interconnect, down to the polysilicon (pink), wells (greyish), and substrate (green)
 
An integrated circuit or monolithic integrated circuit (also referred to as an IC, a chip, or a microchip) is a set of electronic circuits on one small flat piece (or "chip") of semiconductor material that is normally silicon. The integration of large numbers of tiny transistors into a small chip results in circuits that are orders of magnitude smaller, cheaper, and faster than those constructed of discrete electronic components. The IC's mass production capability, reliability and building-block approach to circuit design has ensured the rapid adoption of standardized ICs in place of designs using discrete transistors. ICs are now used in virtually all electronic equipment and have revolutionized the world of electronics. Computers, mobile phones, and other digital home appliances are now inextricable parts of the structure of modern societies, made possible by the small size and low cost of ICs. 

Integrated circuits were made practical by mid-20th-century technology advancements in semiconductor device fabrication. Since their origins in the 1960s, the size, speed, and capacity of chips have progressed enormously, driven by technical advances that fit more and more transistors on chips of the same size – a modern chip may have many billions of transistors in an area the size of a human fingernail. These advances, roughly following Moore's law, make computer chips of today possess millions of times the capacity and thousands of times the speed of the computer chips of the early 1970s.

ICs have two main advantages over discrete circuits: cost and performance. Cost is low because the chips, with all their components, are printed as a unit by photolithography rather than being constructed one transistor at a time. Furthermore, packaged ICs use much less material than discrete circuits. Performance is high because the IC's components switch quickly and consume comparatively little power because of their small size and close proximity. The main disadvantage of ICs is the high cost to design them and fabricate the required photomasks. This high initial cost means ICs are only practical when high production volumes are anticipated.

Terminology

An integrated circuit is defined as:
A circuit in which all or some of the circuit elements are inseparably associated and electrically interconnected so that it is considered to be indivisible for the purposes of construction and commerce.
Circuits meeting this definition can be constructed using many different technologies, including thin-film transistors, thick-film technologies, or hybrid integrated circuits. However, in general usage integrated circuit has come to refer to the single-piece circuit construction originally known as a monolithic integrated circuit.

Arguably, the first examples of integrated circuits would include the Loewe 3NF. Although far from a monolithic construction, it certainly meets the definition given above.

Invention

Early developments of the integrated circuit go back to 1949, when German engineer Werner Jacobi (Siemens AG) filed a patent for an integrated-circuit-like semiconductor amplifying device showing five transistors on a common substrate in a 3-stage amplifier arrangement. Jacobi disclosed small and cheap hearing aids as typical industrial applications of his patent. An immediate commercial use of his patent has not been reported. 

The idea of the integrated circuit was conceived by Geoffrey Dummer (1909–2002), a radar scientist working for the Royal Radar Establishment of the British Ministry of Defence. Dummer presented the idea to the public at the Symposium on Progress in Quality Electronic Components in Washington, D.C. on 7 May 1952. He gave many symposia publicly to propagate his ideas and unsuccessfully attempted to build such a circuit in 1956.

A precursor idea to the IC was to create small ceramic squares (wafers), each containing a single miniaturized component. Components could then be integrated and wired into a bidimensional or tridimensional compact grid. This idea, which seemed very promising in 1957, was proposed to the US Army by Jack Kilby and led to the short-lived Micromodule Program (similar to 1951's Project Tinkertoy). However, as the project was gaining momentum, Kilby came up with a new, revolutionary design: the IC. 

Jack Kilby's original integrated circuit
 
Newly employed by Texas Instruments, Kilby recorded his initial ideas concerning the integrated circuit in July 1958, successfully demonstrating the first working integrated example on 12 September 1958. In his patent application of 6 February 1959, Kilby described his new device as "a body of semiconductor material … wherein all the components of the electronic circuit are completely integrated." The first customer for the new invention was the US Air Force.

Kilby won the 2000 Nobel Prize in Physics for his part in the invention of the integrated circuit. His work was named an IEEE Milestone in 2009.

Half a year after Kilby, Robert Noyce at Fairchild Semiconductor developed a new variety of integrated circuit, more practical than Kilby's implementation. Noyce's design was made of silicon, whereas Kilby's chip was made of germanium. Noyce credited Kurt Lehovec of Sprague Electric for the principle of p–n junction isolation, a key concept behind the IC. This isolation allows each transistor to operate independently despite being part of the same piece of silicon.

Fairchild Semiconductor was also home of the first silicon-gate IC technology with self-aligned gates, the basis of all modern CMOS integrated circuits. The technology was developed by Italian physicist Federico Faggin in 1968. In 1970, he joined Intel in order to develop the first single-chip central processing unit (CPU) microprocessor, the Intel 4004, for which he received the National Medal of Technology and Innovation in 2010. The 4004 was designed by Busicom's Masatoshi Shima and Intel's Ted Hoff in 1969, but it was Faggin's improved design in 1970 that made it a reality.

Advances

Advances in IC technology, primarily smaller features and larger chips, have allowed the number of transistors in an integrated circuit to double every two years, a trend known as Moore's law. This increased capacity has been used to decrease cost and increase functionality. In general, as the feature size shrinks, almost every aspect of an IC's operation improves. The cost per transistor and the switching power consumption per transistor goes down, while the memory capacity and speed go up, through the relationships defined by Dennard scaling. Because speed, capacity, and power consumption gains are apparent to the end user, there is fierce competition among the manufacturers to use finer geometries. Over the years, transistor sizes have decreased from 10s of microns in the early 1970s to 10 nanometers in 2017 with a corresponding million-fold increase in transistors per unit area. As of 2016, typical chip areas range from a few square millimeters to around 600 mm2, with up to 25 million transistors per mm2.

The expected shrinking of feature sizes and the needed progress in related areas was forecast for many years by the International Technology Roadmap for Semiconductors (ITRS). The final ITRS was issued in 2016, and it is being replaced by the International Roadmap for Devices and Systems.

Initially, ICs were strictly electronic devices. The success of ICs has led to the integration of other technologies, in an attempt to obtain the same advantages of small size and low cost. These technologies include mechanical devices, optics, and sensors.
  • Charge-coupled devices, and the closely related active pixel sensors, are chips that are sensitive to light. They have largely replaced photographic film in scientific, medical, and consumer applications. Billions of these devices are now produced each year for applications such as cellphones, tablets, and digital cameras. This sub-field of ICs won the Nobel prize in 2009.
  • Very small mechanical devices driven by electricity can be integrated onto chips, a technology known as microelectromechanical systems. These devices were developed in the late 1980s and are used in a variety of commercial and military applications. Examples include DLP projectors, inkjet printers, and accelerometers and MEMS gyroscopes used to deploy automobile airbags.
  • Since the early 2000s, the integration of optical functionality (optical computing) into silicon chips has been actively pursued in both academic research and in industry resulting in the successful commercialization of silicon based integrated optical transceivers combining optical devices (modulators, detectors, routing) with CMOS based electronics. Integrated optical circuits are also being developed, using the emerging field of physics known as photonics.
  • Integrated circuits are also being developed for sensor applications in medical implants or other bioelectronic devices. Special sealing techniques have to be applied in such biogenic environments to avoid corrosion or biodegradation of the exposed semiconductor materials.
As of 2018, the vast majority of all transistors are fabricated in a single layer on one side of a chip of silicon in a flat 2-dimensional planar process. Researchers have produced prototypes of several promising alternatives, such as:

Design

The cost of designing and developing a complex integrated circuit is quite high, normally in the multiple tens of millions of dollars. Therefore, it only makes economic sense to produce integrated circuit products with high production volume, so the non-recurring engineering (NRE) costs are spread across typically millions of production units.

Modern semiconductor chips have billions of components, and are too complex to be designed by hand. Software tools to help the designer are essential. Electronic Design Automation (EDA), also referred to as Electronic Computer-Aided Design (ECAD), is a category of software tools for designing electronic systems, including integrated circuits. The tools work together in a design flow that engineers use to design and analyze entire semiconductor chips.

Types

A CMOS 4511 IC in a DIP
 
Integrated circuits can be classified into analog, digital and mixed signal, consisting of both analog and digital signaling on the same IC.

Digital integrated circuits can contain anywhere from one to billions of logic gates, flip-flops, multiplexers, and other circuits in a few square millimeters. The small size of these circuits allows high speed, low power dissipation, and reduced manufacturing cost compared with board-level integration. These digital ICs, typically microprocessors, DSPs, and microcontrollers, work using boolean algebra to process "one" and "zero" signals

The die from an Intel 8742, an 8-bit microcontroller that includes a CPU running at 12 MHz, 128 bytes of RAM, 2048 bytes of EPROM, and I/O in the same chip
 
Among the most advanced integrated circuits are the microprocessors or "cores", which control everything from personal computers and cellular phones to digital microwave ovens. Digital memory chips and application-specific integrated circuits (ASICs) are examples of other families of integrated circuits that are important to the modern information society

In the 1980s, programmable logic devices were developed. These devices contain circuits whose logical function and connectivity can be programmed by the user, rather than being fixed by the integrated circuit manufacturer. This allows a single chip to be programmed to implement different LSI-type functions such as logic gates, adders and registers. Current devices called field-programmable gate arrays (FPGAs) can (as of 2016) implement the equivalent of millions of gates and operate at frequencies up to 1 GHz.

Analog ICs, such as sensors, power management circuits, and operational amplifiers (op-amps), work by processing continuous signals. They perform functions like amplification, active filtering, demodulation, and mixing. Analog ICs ease the burden on circuit designers by having expertly designed analog circuits available instead of designing a difficult analog circuit from scratch. 

ICs can also combine analog and digital circuits on a single chip to create functions such as analog-to-digital converters and digital-to-analog converters. Such mixed-signal circuits offer smaller size and lower cost, but must carefully account for signal interference. Prior to the late 1990s, radios could not be fabricated in the same low-cost CMOS processes as microprocessors. But since 1998, a large number of radio chips have been developed using CMOS processes. Examples include Intel's DECT cordless phone, or 802.11 (Wi-Fi) chips created by Atheros and other companies.

Modern electronic component distributors often further sub-categorize the huge variety of integrated circuits now available:

Manufacturing

Fabrication

Rendering of a small standard cell with three metal layers (dielectric has been removed). The sand-colored structures are metal interconnect, with the vertical pillars being contacts, typically plugs of tungsten. The reddish structures are polysilicon gates, and the solid at the bottom is the crystalline silicon bulk.
 
Schematic structure of a CMOS chip, as built in the early 2000s. The graphic shows LDD-MISFET's on an SOI substrate with five metallization layers and solder bump for flip-chip bonding. It also shows the section for FEOL (front-end of line), BEOL (back-end of line) and first parts of back-end process.
 
The semiconductors of the periodic table of the chemical elements were identified as the most likely materials for a solid-state vacuum tube. Starting with copper oxide, proceeding to germanium, then silicon, the materials were systematically studied in the 1940s and 1950s. Today, monocrystalline silicon is the main substrate used for ICs although some III-V compounds of the periodic table such as gallium arsenide are used for specialized applications like LEDs, lasers, solar cells and the highest-speed integrated circuits. It took decades to perfect methods of creating crystals with minimal defects in semiconducting materials' crystal structure.

Semiconductor ICs are fabricated in a planar process which includes three key process steps – photolithography, deposition (such as chemical vapor deposition), and etching. The main process steps are supplemented by doping and cleaning.

Mono-crystal silicon wafers are used in most applications (or for special applications, other semiconductors such as gallium arsenide are used). The wafer need not be entirely silicon. Photolithography is used to mark different areas of the substrate to be doped or to have polysilicon, insulators or metal (typically aluminium or copper) tracks deposited on them. Dopants are impurities intentionally introduced to a semiconductor to modulate its electronic properties. Doping is the process of adding dopants to a semiconductor material.
  • Integrated circuits are composed of many overlapping layers, each defined by photolithography, and normally shown in different colors. Some layers mark where various dopants are diffused into the substrate (called diffusion layers), some define where additional ions are implanted (implant layers), some define the conductors (doped polysilicon or metal layers), and some define the connections between the conducting layers (via or contact layers). All components are constructed from a specific combination of these layers.
  • In a self-aligned CMOS process, a transistor is formed wherever the gate layer (polysilicon or metal) crosses a diffusion layer.
  • Capacitive structures, in form very much like the parallel conducting plates of a traditional electrical capacitor, are formed according to the area of the "plates", with insulating material between the plates. Capacitors of a wide range of sizes are common on ICs.
  • Meandering stripes of varying lengths are sometimes used to form on-chip resistors, though most logic circuits do not need any resistors. The ratio of the length of the resistive structure to its width, combined with its sheet resistivity, determines the resistance.
  • More rarely, inductive structures can be built as tiny on-chip coils, or simulated by gyrators.
Since a CMOS device only draws current on the transition between logic states, CMOS devices consume much less current than bipolar junction transistor devices. 

A random-access memory is the most regular type of integrated circuit; the highest density devices are thus memories; but even a microprocessor will have memory on the chip. Although the structures are intricate – with widths which have been shrinking for decades – the layers remain much thinner than the device widths. The layers of material are fabricated much like a photographic process, although light waves in the visible spectrum cannot be used to "expose" a layer of material, as they would be too large for the features. Thus photons of higher frequencies (typically ultraviolet) are used to create the patterns for each layer. Because each feature is so small, electron microscopes are essential tools for a process engineer who might be debugging a fabrication process. 

Each device is tested before packaging using automated test equipment (ATE), in a process known as wafer testing, or wafer probing. The wafer is then cut into rectangular blocks, each of which is called a die. Each good die (plural dice, dies, or die) is then connected into a package using aluminium (or gold) bond wires which are thermosonically bonded to pads, usually found around the edge of the die. Thermosonic bonding was first introduced by A. Coucoulas which provided a reliable means of forming these vital electrical connections to the outside world. After packaging, the devices go through final testing on the same or similar ATE used during wafer probing. Industrial CT scanning can also be used. Test cost can account for over 25% of the cost of fabrication on lower-cost products, but can be negligible on low-yielding, larger, or higher-cost devices.

As of 2016, a fabrication facility (commonly known as a semiconductor fab) can cost over US$8 billion to construct. The cost of a fabrication facility rises over time because of increased complexity of new products. This is known as Rock's law. Today, the most advanced processes employ the following techniques:

Packaging

A Soviet MSI nMOS chip made in 1977, part of a four-chip calculator set designed in 1970
 
The earliest integrated circuits were packaged in ceramic flat packs, which continued to be used by the military for their reliability and small size for many years. Commercial circuit packaging quickly moved to the dual in-line package (DIP), first in ceramic and later in plastic. In the 1980s pin counts of VLSI circuits exceeded the practical limit for DIP packaging, leading to pin grid array (PGA) and leadless chip carrier (LCC) packages. Surface mount packaging appeared in the early 1980s and became popular in the late 1980s, using finer lead pitch with leads formed as either gull-wing or J-lead, as exemplified by the small-outline integrated circuit (SOIC) package – a carrier which occupies an area about 30–50% less than an equivalent DIP and is typically 70% thinner. This package has "gull wing" leads protruding from the two long sides and a lead spacing of 0.050 inches.
In the late 1990s, plastic quad flat pack (PQFP) and thin small-outline package (TSOP) packages became the most common for high pin count devices, though PGA packages are still used for high-end microprocessors

Ball grid array (BGA) packages have existed since the 1970s. Flip-chip Ball Grid Array packages, which allow for much higher pin count than other package types, were developed in the 1990s. In an FCBGA package the die is mounted upside-down (flipped) and connects to the package balls via a package substrate that is similar to a printed-circuit board rather than by wires. FCBGA packages allow an array of input-output signals (called Area-I/O) to be distributed over the entire die rather than being confined to the die periphery. BGA devices have the advantage of not needing a dedicated socket, but are much harder to replace in case of device failure.

Intel transitioned away from PGA to land grid array (LGA) and BGA beginning in 2004, with the last PGA socket released in 2014 for mobile platforms. As of 2018, AMD uses PGA packages on mainstream desktop processors, BGA packages on mobile processors, and high-end desktop and server microprocessors use LGA packages.

Electrical signals leaving the die must pass through the material electrically connecting the die to the package, through the conductive traces (paths) in the package, through the leads connecting the package to the conductive traces on the printed circuit board. The materials and structures used in the path these electrical signals must travel have very different electrical properties, compared to those that travel to different parts of the same die. As a result, they require special design techniques to ensure the signals are not corrupted, and much more electric power than signals confined to the die itself. 

When multiple dies are put in one package, the result is a system in package, abbreviated SiP. A multi-chip module (MCM), is created by combining multiple dies on a small substrate often made of ceramic. The distinction between a large MCM and a small printed circuit board is sometimes fuzzy.
Packaged integrated circuits are usually large enough to include identifying information. Four common sections are the manufacturer's name or logo, the part number, a part production batch number and serial number, and a four-digit date-code to identify when the chip was manufactured. Extremely small surface-mount technology parts often bear only a number used in a manufacturer's lookup table to find the integrated circuit's characteristics. 

The manufacturing date is commonly represented as a two-digit year followed by a two-digit week code, such that a part bearing the code 8341 was manufactured in week 41 of 1983, or approximately in October 1983.

Intellectual property

The possibility of copying by photographing each layer of an integrated circuit and preparing photomasks for its production on the basis of the photographs obtained is a reason for the introduction of legislation for the protection of layout-designs. The Semiconductor Chip Protection Act of 1984 established intellectual property protection for photomasks used to produce integrated circuits.

A diplomatic conference was held at Washington, D.C., in 1989, which adopted a Treaty on Intellectual Property in Respect of Integrated Circuits (IPIC Treaty).

The Treaty on Intellectual Property in respect of Integrated Circuits, also called Washington Treaty or IPIC Treaty (signed at Washington on 26 May 1989) is currently not in force, but was partially integrated into the TRIPS agreement.

National laws protecting IC layout designs have been adopted in a number of countries, including Japan, the EC, the UK, Australia, and Korea.

Other developments

Future developments seem to follow the multi-core multi-microprocessor paradigm, already used by Intel and AMD multi-core processors. Rapport Inc. and IBM started shipping the KC256 in 2006, a 256-core microprocessor. Intel, as recently as February–August 2011, unveiled a prototype, "not for commercial sale" chip that bears 80 cores. Each core is capable of handling its own task independently of the others. This is in response to heat-versus-speed limit, that is about to be reached using existing transistor technology (see: thermal design power). This design provides a new challenge to chip programming. Parallel programming languages such as the open-source X10 programming language are designed to assist with this task.

Generations

In the early days of simple integrated circuits, the technology's large scale limited each chip to only a few transistors, and the low degree of integration meant the design process was relatively simple. Manufacturing yields were also quite low by today's standards. As the technology progressed, millions, then billions of transistors could be placed on one chip, and good designs required thorough planning, giving rise to the field of electronic design automation, or EDA. 

Name Signification Year Transistors number Logic gates number
SSI small-scale integration 1964 1 to 10 1 to 12
MSI medium-scale integration 1968 10 to 500 13 to 99
LSI large-scale integration 1971 500 to 20 000 100 to 9999
VLSI very large-scale integration 1980 20 000 to 1 000 000 10 000 to 99 999
ULSI ultra-large-scale integration 1984 1 000 000 and more 100 000 and more

SSI, MSI and LSI

The first integrated circuits contained only a few transistors. Early digital circuits containing tens of transistors provided a few logic gates, and early linear ICs such as the Plessey SL201 or the Philips TAA320 had as few as two transistors. The number of transistors in an integrated circuit has increased dramatically since then. The term "large scale integration" (LSI) was first used by IBM scientist Rolf Landauer when describing the theoretical concept; that term gave rise to the terms "small-scale integration" (SSI), "medium-scale integration" (MSI), "very-large-scale integration" (VLSI), and "ultra-large-scale integration" (ULSI). The early integrated circuits were SSI. 

SSI circuits were crucial to early aerospace projects, and aerospace projects helped inspire development of the technology. Both the Minuteman missile and Apollo program needed lightweight digital computers for their inertial guidance systems. Although the Apollo guidance computer led and motivated integrated-circuit technology, it was the Minuteman missile that forced it into mass-production. The Minuteman missile program and various other United States Navy programs accounted for the total $4 million integrated circuit market in 1962, and by 1968, U.S. Government spending on space and defense still accounted for 37% of the $312 million total production. 

The demand by the U.S. Government supported the nascent integrated circuit market until costs fell enough to allow IC firms to penetrate the industrial market and eventually the consumer market. The average price per integrated circuit dropped from $50.00 in 1962 to $2.33 in 1968. Integrated circuits began to appear in consumer products by the turn of the 1970s decade. A typical application was FM inter-carrier sound processing in television receivers. 

The first MOS chips were small-scale integration chips for NASA satellites.

The next step in the development of integrated circuits, taken in the late 1960s, introduced devices which contained hundreds of transistors on each chip, called "medium-scale integration" (MSI).

In 1964, Frank Wanlass demonstrated a single-chip 16-bit shift register he designed, with a then-incredible 120 transistors on a single chip.

MSI devices were attractive economically because while they cost a little more to produce than SSI devices, they allowed more complex systems to be produced using smaller circuit boards, less assembly work because of fewer separate components, and a number of other advantages. 

Further development, driven by the same economic factors, led to "large-scale integration" (LSI) in the mid-1970s, with tens of thousands of transistors per chip. 

The masks used to process and manufacture SSI, MSI and early LSI and VLSI devices (such as the microprocessors of the early 1970s) were mostly created by hand, often using Rubylith-tape or similar. For large or complex ICs (such as memories or processors), this was often done by specially hired professionals in charge of circuit layout, placed under the supervision of a team of engineers, who would also, along with the circuit designers, inspect and verify the correctness and completeness of each mask. 

Integrated circuits such as 1K-bit RAMs, calculator chips, and the first microprocessors, that began to be manufactured in moderate quantities in the early 1970s, had under 4,000 transistors. True LSI circuits, approaching 10,000 transistors, began to be produced around 1974, for computer main memories and second-generation microprocessors. 

Some SSI and MSI chips, like discrete transistors, are still mass-produced, both to maintain old equipment and build new devices that require only a few gates. The 7400 series of TTL chips, for example, has become a de facto standard and remains in production.

VLSI

Upper interconnect layers on an Intel 80486DX2 microprocessor die
 
The final step in the development process, starting in the 1980s and continuing through the present, was "very-large-scale integration" (VLSI). The development started with hundreds of thousands of transistors in the early 1980s, As of 2016, transistor counts continue to grow beyond ten billion transistors per chip. 

Multiple developments were required to achieve this increased density. Manufacturers moved to smaller design rules and cleaner fabrication facilities so that they could make chips with more transistors and maintain adequate yield. The path of process improvements was summarized by the International Technology Roadmap for Semiconductors (ITRS), which has since been succeeded by the International Roadmap for Devices and Systems (IRDS). Electronic design tools improved enough to make it practical to finish these designs in a reasonable time. The more energy-efficient CMOS replaced NMOS and PMOS, avoiding a prohibitive increase in power consumption. Modern VLSI devices contain so many transistors, layers, interconnections, and other features that it is no longer feasible to check the masks or do the original design by hand. Instead, engineers use EDA tools to perform most functional verification work.

In 1986 the first one-megabit random-access memory (RAM) chips were introduced, containing more than one million transistors. Microprocessor chips passed the million-transistor mark in 1989 and the billion-transistor mark in 2005. The trend continues largely unabated, with chips introduced in 2007 containing tens of billions of memory transistors.

ULSI, WSI, SoC and 3D-IC

To reflect further growth of the complexity, the term ULSI that stands for "ultra-large-scale integration" was proposed for chips of more than 1 million transistors.

Wafer-scale integration (WSI) is a means of building very large integrated circuits that uses an entire silicon wafer to produce a single "super-chip". Through a combination of large size and reduced packaging, WSI could lead to dramatically reduced costs for some systems, notably massively parallel supercomputers. The name is taken from the term Very-Large-Scale Integration, the current state of the art when WSI was being developed.

A system-on-a-chip (SoC or SOC) is an integrated circuit in which all the components needed for a computer or other system are included on a single chip. The design of such a device can be complex and costly, and building disparate components on a single piece of silicon may compromise the efficiency of some elements. However, these drawbacks are offset by lower manufacturing and assembly costs and by a greatly reduced power budget: because signals among the components are kept on-die, much less power is required. Further, signal sources and destinations are physically closer on die, reducing the length of wiring and therefore latency, transmission power costs and waste heat from communication between modules on the same chip. This has led to an exploration of so-called Network-on-Chip (NoC) devices, which apply system-on-chip design methodologies to digital communication networks as opposed to traditional bus architectures.

A three-dimensional integrated circuit (3D-IC) has two or more layers of active electronic components that are integrated both vertically and horizontally into a single circuit. Communication between layers uses on-die signaling, so power consumption is much lower than in equivalent separate circuits. Judicious use of short vertical wires can substantially reduce overall wire length for faster operation.

Silicon labeling and graffiti

To allow identification during production most silicon chips will have a serial number in one corner. It is also common to add the manufacturer's logo. Ever since ICs were created, some chip designers have used the silicon surface area for surreptitious, non-functional images or words. These are sometimes referred to as chip art, silicon art, silicon graffiti or silicon doodling.

ICs and IC families

Scientific information from the Mars Exploration Rover mission

From Wikipedia, the free encyclopedia

Artist's Concept of Rover on Mars (credit: Maas Digital LLC)
 
n enormous amount of scientific information related to the Martian geology and atmosphere, as well as providing some astronomical observations from Mars. This article covers information gathered by the Opportunity rover during the initial phase of its mission. Information on science gathered by Spirit can be found mostly in the Spirit rover article. 

The ongoing unmanned Mars exploration mission, commenced in 2003 sent two robotic rovers, Spirit and Opportunity, to explore the Martian surface and geology. The mission was led by Project Manager Peter Theisinger of NASA's Jet Propulsion Laboratory and Principal Investigator Steven Squyres, professor of astronomy at Cornell University.

Primary among the mission's scientific goals is to search for and characterize a wide range of rocks and soils that hold clues to past water activity on Mars. In recognition of the vast amount of scientific information amassed by both rovers, two asteroids have been named in their honor: 37452 Spirit and 39382 Opportunity

On January 24, 2014, NASA reported that current studies on the planet Mars by the Curiosity and Opportunity rovers will now be searching for evidence of ancient life, including a biosphere based on autotrophic, chemotrophic or chemolithoautotrophic microorganisms, as well as ancient water, including fluvio-lacustrine environments (plains related to ancient rivers or lakes) that may have been habitable. The search for evidence of habitability, taphonomy (related to fossils), and organic carbon on the planet Mars is now a primary NASA objective.

Water hypothesis

On March 2, 2004, NASA announced that "Opportunity has landed in an area of Mars where liquid water once drenched the surface". Associate administrator Ed Weiler told reporters that the area "would have been good habitable environment", although no traces of life have been found. 

Larger grains suggest the presence of fluid.

This statement was made during a press conference, where mission scientists listed a number of observations that strongly support this view:

Distributions of spherules
  • Hypothesis: Spherules are concretions created in water as a solvent.
  • Competing hypothesis: Spherules are rehardened molten rock droplets, created by volcanoes or meteor strikes.
  • Supporting data: Location of spherules in the rock matrix is random and evenly spread.
  • Quote from Steve Squyres: "The little spherules like blueberries in a muffin are embedded in this rock and weathering out of it. Three ideas, lapilli, little volcanic hailstones, one possibility. Two, droplets of volcanic glass or impact. We've looked at these things very carefully. Probably concretions. If so, it's pointing towards water."
Detailed analysis of environmental, chemical, and mineralogical data taken from the Opportunity rover led to the elimination of the competing hypotheses, and the confirmation of the conclusion that the spherules were formed in place as post-depositional sedimentary concretions from an aqueous source.

In the lower left, a spherule can be seen penetrating the interior of a vug.

Vugs
  • Hypothesis: Rock was formed in water, for instance by precipitation.
  • Competing hypothesis: Rock were formed by ash deposits.
  • Supporting data: Voids found in bedrock resemble "vugs" which are left by eroded away, disk-shaped crystals, possibly dissolved in a watery environment.
  • Quote from Steve Squyres: The second piece of evidence is that when we looked at it close-up, it was shot through with tabular holes. Familiar forms. When crystals grow within rocks, precipitated from water. If they're tabular, as they grow you can get tabular crystals and water chem changes and they go away or they weather away."
Sulfates and jarosite
  • Hypothesis: Water created tell-tale salt chemicals in the rock.
  • Competing hypothesis: Chemistry of rocks is determined by volcanic processes.
  • Supporting data: Sulfate salts and jarosite mineral were found in the rock. On Earth they are made in standing water (possibly during evaporation).
  • Quote from Steve Squyres: "Next piece of evidence comes from APXS. We found it looked like a lot of sulfur. That was the outside of the rock. We brought with us a grinding tool, the RAT and we ground away 2-4 mm and found even more sulfur. Too much to explain by other than that this rock is full of sulfate salts. That's a telltale sign of liquid water. Mini-TES also found evidence of sulfate salts. Most compelling of all, the Mössbauer spectrometer in the RATted space showed compelling evidence of jarosite, an iron-(III) sulfate basic hydrate. Fairly rare, found on Earth and had been predicted that it might be found on Mars some day. This is a mineral that you got to have water around to make."
Crossbedding features in rock "Last Chance".
 
On March 23, 2004, NASA announced that they believe that Opportunity had not landed in a location merely "drenched in water", but on what was once a coastal area. "We think Opportunity is parked on what was once the shoreline of a salty sea on Mars," said Dr. Steve Squyres of Cornell University.

The announcement was based on evidence of sedimentary rocks that are consistent with those formed by water and not wind. "Bedding patterns in some finely layered rocks indicate the sand-sized grains of sediment that eventually bonded together were shaped into ripples by water at least five centimeters (two inches) deep, possibly much deeper, and flowing at a speed of 10 to 50 centimeters (four to 20 inches) per second," said Dr. John Grotzinger, from MIT. The landing site was likely a salt flat on the edge of a large body of water that was covered by shallow water. 

Other evidence includes findings of chlorine and bromine in the rocks which indicates the rocks had at least soaked in mineral-rich water, possibly from underground sources, after they formed. Increased assurance of the bromine findings strengthens the case that rock-forming particles precipitated from surface water as salt concentrations climbed past saturation while water was evaporating. 

The evidence for water was published in a series of scientific papers, with the initial results appearing in the journal Science and then with a detailed discussion of the sedimentary geology of the landing site appearing in a special issue of the journal Earth and Planetary Science Letters

Spherules and hematite

Early in the mission, mission scientists were able to prove that the abundant spherules at Eagle crater were the source of hematite in the area discovered from orbit.

Hematite

The distribution of hematite in Sinus Meridiani, where Meridiani Planum is located.
 
Geologists were eager to reach a hematite-rich area (in the center of the picture at right) to closely examine the soil, which may reveal secrets about how the hematite got to this location. Knowing how the hematite on Mars was formed may help scientists characterize the past environment and determine whether that environment provided favorable conditions for life.

"Grey hematite is a mineral indicator of past water," said Dr. Joy Crisp, JPL project scientist. "It is not always associated with water, but it often is." 

Scientists have wanted to find out which of these processes created grey hematite on Mars since 1998, when Mars Global Surveyor spotted large concentrations of the mineral near the planet's equator (seen in the right picture). This discovery provided the first mineral evidence that Mars' history may have included water. 

"We want to know if the grains of hematite appear to be rounded and cemented together by the action of liquid water or if they're crystals that grew from a volcanic melt," said Crisp. "Is the hematite in layers, which would suggest that it was laid down by water, or in veins in the rock, which would be more characteristic of water having flowed through the rocks."

The next picture shows a mineral map, the first ever made on the surface of another planet, which was generated from a section of the panorama picture overlaid with data taken from the rover's Mini-TES. The Mini-TES spectral data was analyzed in a way that the concentration of the mineral hematite was deduced and its level coded in color. Red and orange mean high concentration, green and blue low concentration. 

This spectral map of Eagle crater shows hematite.
 
The next picture shows a hematite abundance "index map" that helps geologists choose hematite-rich locations to visit around Opportunity's landing site. Blue dots equal areas low in hematite and red dots equal areas high in hematite. The colored dots represent data collected by the miniature thermal emission spectrometer on Sol 11, after Opportunity had rolled off of the lander and the rover was located at the center of the blue semicircle (the spectrometer is located on the panoramic camera mast). 

A hematite abundance index map of Eagle crater.

The area to the left (with high concentration of hematite) was selected by mission members for further investigation, and called Hematite Slope.

During Sol 23 (February 16) Opportunity successfully trenched the soil at Hematite Slope and started to investigate the details of the layering.

Spherules

This color-enhanced image shows spherical granules.
 
Microscopic images of the soil taken by Opportunity revealed small spherically shaped granules. They were first seen on pictures taken on Sol 10, right after the rover drove from the lander onto martian soil. 

When Opportunity dug her first trench (Sol 23), pictures of the lower layers showed similar round spherules. But this time they had a very shiny surface that created strong glints and glares. "They appear shiny or polished," said Albert Yen, science team member, during a press conference on February 19. He said: "Data will hopefully help us figure out what's altering them." At the same press briefing, Dr. Squyres noted this as one of the main question: "Where did those spherules come from, dropped from above or grown in place?" 

Mission scientists reported on March 2 that they concluded a survey of the distribution of spherules in the bedrock. They found that they spread out evenly and randomly inside the rocks, and not in layers. This supports the notion that they grew in place, since if their origin was related to volcanic or meteoric episodes one would expect layers of spherules as a "record in time" for each event. This observation was added to the list of evidence for liquid water being present at this rock site, where it is thought the spherules formed.

Berry Bowl

The rock "Berry Bowl".
 
On March 18 the results of the investigation of the area called "Berry Bowl" was announced. This site is a large rock with a small, bowl-shaped depression, in which a large number of spherules had accumulated. The MIMOS II Mössbauer spectrometer was used to analyze the depression and then the area of the rock right beside it. Any difference in the measured data was then attributed to the material in the spherules. A large difference in the obtained "spectra" was found. "This is the fingerprint of hematite, so we conclude that the major iron-bearing mineral in the berries is hematite," said Daniel Rodionov, a rover science team collaborator from the University of Mainz, Germany. This discovery seems to strengthen the conclusion, that spherules are concretions, grown in wet condition with dissolved iron.

Rocks and minerals

The rocks on the plains of Gusev are a type of basalt. They contain the minerals olivine, pyroxene, plagioclase, and magnetite, and they look like volcanic basalt as they are fine-grained with irregular holes (geologists would say they have vesicles and vugs). Much of the soil on the plains came from the breakdown of the local rocks. Fairly high levels of nickel were found in some soils; probably from meteorites. Analysis shows that the rocks have been slightly altered by tiny amounts of water. Outside coatings and cracks inside the rocks suggest water deposited minerals, maybe bromine compounds. All the rocks contain a fine coating of dust and one or more harder rinds of material. One type can be brushed off, while another needed to be ground off by the Rock Abrasion Tool (RAT).

There are a variety of rocks in the Columbia Hills (Mars), some of which have been altered by water, but not by very much water.

The dust in Gusev Crater is the same as dust all around the planet. All the dust was found to be magnetic. Moreover, Spirit found the magnetism was caused by the mineral magnetite, especially magnetite that contained the element titanium. One magnet was able to completely divert all dust hence all Martian dust is thought to be magnetic. The spectra of the dust was similar to spectra of bright, low thermal inertia regions like Tharsis and Arabia that have been detected by orbiting satellites. A thin layer of dust, maybe less than one millimeter thick covers all surfaces. Something in it contains a small amount of chemically bound water.

Plains

Adirondack
Adirondacksquare.jpg
Rat post grind.jpg
Above: An approximate true color view of Adirondack, taken by Spirit's pancam.
Below:Digital camera image (from Spirit's Pancam) of Adirondack after a RAT grind (Spirit's rock grinding tool)
Feature typeRock
Coordinates14.6°S 175.5°ECoordinates:

Observations of rocks on the plains show they contain the minerals pyroxene, olivine, plagioclase, and magnetite. These rocks can be classified in different ways. The amounts and types of minerals make the rocks primitive basalts—also called picritic basalts. The rocks are similar to ancient terrestrial rocks called basaltic komatiites. Rocks of the plains also resemble the basaltic shergottites, meteorites which came from Mars. One classification system compares the amount of alkali elements to the amount of silica on a graph; in this system, Gusev plains rocks lay near the junction of basalt, picrobasalt, and tephite. The Irvine-Barager classification calls them basalts. Plain's rocks have been very slightly altered, probably by thin films of water because they are softer and contain veins of light colored material that may be bromine compounds, as well as coatings or rinds. It is thought that small amounts of water may have gotten into cracks inducing mineralization processes. Coatings on the rocks may have occurred when rocks were buried and interacted with thin films of water and dust. One sign that they were altered was that it was easier to grind these rocks compared to the same types of rocks found on Earth. 

The first rock that Spirit studied was Adirondack. It turned out to be typical of the other rocks on the plains.

Columbia Hills

Scientists found a variety of rock types in the Columbia Hills, and they placed them into six different categories. The six are: Clovis, Wishbone, Peace, Watchtower, Backstay, and Independence. They are named after a prominent rock in each group. Their chemical compositions, as measured by APXS, are significantly different from each other. Most importantly, all of the rocks in Columbia Hills show various degrees of alteration due to aqueous fluids. They are enriched in the elements phosphorus, sulfur, chlorine, and bromine—all of which can be carried around in water solutions. The Columbia Hills' rocks contain basaltic glass, along with varying amounts of olivine and sulfates. The olivine abundance varies inversely with the amount of sulfates. This is exactly what is expected because water destroys olivine but helps to produce sulfates. 

Acid fog is believed to have changed some of the Watchtower rocks. This was in a 200 meter long section of Cumberland Ridge and the Husband Hill summit. Certain places became less crystalline and more amorphous. Acidic water vapor from volcanoes dissolved some minerals forming a gel. When water evaporated a cement formed and produced small bumps. This type of process has been observed in the lab when basalt rocks are exposed to sulfuric and hydrochloric acids.

The Clovis group is especially interesting because the Mössbauer spectrometer(MB) detected goethite in it. Goethite forms only in the presence of water, so its discovery is the first direct evidence of past water in the Columbia Hills's rocks. In addition, the MB spectra of rocks and outcrops displayed a strong decline in olivine presence, although the rocks probably once contained much olivine. Olivine is a marker for the lack of water because it easily decomposes in the presence of water. Sulfate was found, and it needs water to form. Wishstone contained a great deal of plagioclase, some olivine, and anhydrate (a sulfate). Peace rocks showed sulfur and strong evidence for bound water, so hydrated sulfates are suspected. Watchtower class rocks lack olivine consequently they may have been altered by water. The Independence class showed some signs of clay (perhaps montmorillonite a member of the smectite group). Clays require fairly long term exposure to water to form. One type of soil, called Paso Robles, from the Columbia Hills, may be an evaporate deposit because it contains large amounts of sulfur, phosphorus, calcium, and iron. Also, MB found that much of the iron in Paso Robles soil was of the oxidized, Fe+++ form, which would happen if water had been present.

Towards the middle of the six-year mission (a mission that was supposed to last only 90 days), large amounts of pure silica were found in the soil. The silica could have come from the interaction of soil with acid vapors produced by volcanic activity in the presence of water or from water in a hot spring environment.

After Spirit stopped working scientists studied old data from the Miniature Thermal Emission Spectrometer, or Mini-TES and confirmed the presence of large amounts of carbonate-rich rocks, which means that regions of the planet may have once harbored water. The carbonates were discovered in an outcrop of rocks called "Comanche."

In summary, Spirit found evidence of slight weathering on the plains of Gusev, but no evidence that a lake was there. However, in the Columbia Hills there was clear evidence for a moderate amount of aqueous weathering. The evidence included sulfates and the minerals goethite and carbonates which only form in the presence of water. It is believed that Gusev crater may have held a lake long ago, but it has since been covered by igneous materials. All the dust contains a magnetic component which was identified as magnetite with some titanium. Furthermore, the thin coating of dust that covers everything on Mars is the same in all parts of Mars.

First atmospheric temperature profile

Temperature profile taken by MGS over the MER-B site.
 
During a press conference on March 11, 2004, mission scientists presented the first temperature profile of the martian atmosphere ever measured. It was obtained by combining data taken from the Opportunity Mini-TES infrared spectrometer with data from the TES instrument on board the Mars Global Surveyor (MGS) orbiter. This was necessary because Opportunity can only see up to 6 km high, and the MGS camera could not measure data all the way down to the ground. The data was acquired on February 15 (Sol 22) and is split into two data sets: Since the orbiter is in motion, some data was taken while it was approaching the Opportunity site, other when it was moving away. In the graph, these sets are marked "inbound" (black color) and "outbound" (red color). The dots represent Mini-TES (= rover) data and the straight lines are TES (=orbiter) data. 

Atmospheric science from the MER rovers has been published in a series of scientific papers in Science and Journal of Geophysical Research

Astronomical observations

Opportunity observed the eclipse, or transits of Phobos and transits of Deimos across the Sun, and photographed the Earth, which appeared as a bright celestial object in the Martian sky. 

A transit of Mercury from Mars took place on January 12, 2005 from about 14:45 UTC to 23:05 UTC, but camera resolution did not permit seeing Mercury's 6.1" angular diameter. 

Transits of Deimos across the Sun were seen, but at 2' angular diameter, Deimos is about 20 times larger than Mercury's 6.1" angular diameter.

Introduction to entropy

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